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AM158

Description
1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size50KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

Download Datasheet Parametric View All

AM158 Overview

1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

AM158 Parametric

Parameter NameAttribute value
MakerPANJIT
Reach Compliance Codecompli
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
Maximum non-repetitive peak forward current50 A
Number of components4
Maximum operating temperature125 °C
Maximum output current1.5 A
Maximum repetitive peak reverse voltage800 V
surface mountNO

AM158 Preview

Download Datasheet
DATA SHEET
AM150~AM1510
1.5 AMPERE SILICON MINIATURE SINGLE- PHASE BRIDGES
VOLTAGE
FEATURES
50 to 600 Volts
CURRENT
1.5 Amperes
AM
Unit: inch (mm)
Recongnized File # E111753
• Ratings to 1000V PRV
• Surge overload rating: 50 Amperes peak
• Ideal for printed circuit board
• Reliable low cost construction utilizing molded plastic
• Mounting position:Any
1.2(30.5)MIN
.217(5.5)
.197(5.0)
.370(9.4)
.339(8.6)
technique
MECHANICAL DATA
Case:Reliable low cost construction utilizing molded
plastic technique results in inexpensive product.
Terminals: Leads solderable per MIL-STD-202,
Method 208
Polarity :Polarity symbols marking on body.
Weight: 0.05 ounce, 1.3 grams
.220
(5.6)
.181
(4.6)
.220
(5
.181 .6)
(4.6
)
.031(0.8)
.028(0.7)
Bottom View
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°Cambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
For Capacitive load derate current by 20%.
PARAMETER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current T
A
=50
O
C
Peak Forward Surge Current:8.3ms single half sine-wave
superimposed on rated load (JEDEC method)
I
2
t Rating for fusing ( t<8.35ms)
Maximum Forward Voltage Drop per Bridge Element at 1.0A
Maximum DC Reverse Current at Rated DC Blocking Voltage
Typical Junction capacitance (Note 1)
Typical thermal resistance per leg ((Note 2)
Typical thermal resistance per leg ((Note 2)
Operating and Storage Temperature Range
Storage Temperature Range
NOTES:
SYMBOL AM150
V
RRM
V
RMS
V
DC
I
AV
I
FSM
I
2
t
V
F
I
R
C
J
RθJA
RθJL
T
J
TSTG
AM151
100
70
100
AM152
200
140
200
AM154
400
280
400
1.5
50
10
1.0
AM156
600
420
600
1.0(25.4)MIN
AM158
800
560
800
AM1510
1000
700
1000
UNITS
V
V
V
A
A
A
2
t
V
uA
pF
O
50
35
50
10 @ T
A
=25
O
C
1000 @ T
A
=100
O
C
24
36
13
-55 to + 125
-55 to + 150
C/W
O
C
C
O
1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2. Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.47 X 0.47"(12 X 12mm) copper pads.
STAD-SEP.05.2003
PAGE . 1
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