SKM400GAL128D datasheet, PDF - EEWORLD Datasheet

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SKM400GAL128D: Description565 A, 1200 V, N-CHANNEL IGBT; CategoryDiscrete semiconductor The transistor; File Size719KB，6 Pages; ManufacturerSEMIKRON; Websitehttp://www.semikron.com; Environmental Compliance

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SKM400GAL128D Overview

565 A, 1200 V, N-CHANNEL IGBT

SKM400GAL128D Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SEMIKRON
Parts packaging code	DO-204
package instruction	FLANGE MOUNT, R-XUFM-X5
Contacts	2
Manufacturer packaging code	CASE D 57
Reach Compliance Code	unknow
Other features	UL RECOGNIZED
Shell connection	ISOLATED
Maximum collector current (IC)	565 A
Collector-emitter maximum voltage	1200 V
Configuration	SINGLE WITH BUILT-IN DIODE
JESD-30 code	R-XUFM-X5
JESD-609 code	e2
Number of components	1
Number of terminals	5
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Silver (Sn/Ag)
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	860 ns
Nominal on time (ton)	170 ns

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SKM 400GB128D...

Absolute Maximum Ratings

Symbol Conditions

IGBT

Values

Units

SEMITRANS

SPT IGBT Module

SKM 400GB128D

SKM 400GAL128D

SKM 400GAR128D

Freewheeling Diode

Inverse Diode

Features

Module

Typical Applications

Characteristics

Symbol Conditions

IGBT

min.

typ.

max.

Units

GAL

GAR

11-09-2006 SEN

SKM400GAL128D Related Products

	SKM400GAL128D	SKM400GAR128D	SKM400GB128D_06	SKM400GB128D
Description	565 A, 1200 V, N-CHANNEL IGBT	565 A, 1200 V, N-CHANNEL IGBT	565 A, 1200 V, N-CHANNEL IGBT	565 A, 1200 V, N-CHANNEL IGBT
Shell connection	ISOLATED	isolation	isolation	ISOLATED
Number of components	1	2	2	2
Number of terminals	5	7	7	7
Terminal form	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Terminal location	UPPER	UPPER	UPPER	UPPER
transistor applications	POWER CONTROL	POWER control	POWER control	POWER CONTROL
Transistor component materials	SILICON	silicon	silicon	SILICON

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