5KP30E3 datasheet, PDF - EEWORLD Datasheet

5KP30E3: DescriptionTrans Voltage Suppressor Diode; CategoryDiscrete semiconductor diode; File Size526KB，10 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com; Environmental Compliance

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5KP30E3 Overview

Trans Voltage Suppressor Diode

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Microsemi
package instruction	O-PALF-W2
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum breakdown voltage	40.7 V
Minimum breakdown voltage	33.3 V
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak reverse power dissipation	5000 W
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
polarity	UNIDIRECTIONAL
Maximum power dissipation	8 W
Guideline	IEC-61000-4-2, 4-4, 4-5
Maximum repetitive peak reverse voltage	30 V
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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