3N170-TO-72-4L-ROHS datasheet, PDF

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3N170-TO-72-4L-ROHS: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,; CategoryThe transistor; File Size250KB，2 Pages; ManufacturerLinear ( ADI ); Websitehttp://www.analog.com/cn/index.html; Environmental Compliance

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3N170-TO-72-4L-ROHS Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

3N170-TO-72-4L-ROHS Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Linear ( ADI )
package instruction	,
Reach Compliance Code	compliant
Configuration	Single
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	135 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.3 W
surface mount	NO
Base Number Matches	1

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3N170, 3N171

N-CHANNEL MOSFET

ENHANCEMENT MODE

FEATURES

Direct Replacement for INTERSIL 3N170 & 3N171

LOW DRAIN TO SOURCE RESISTANCE

FAST SWITCHING

ABSOLUTE MAXIMUM RATINGS

@ 25 °C (unless otherwise stated)

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation

Maximum Current

Drain to Source

Maximum Voltages

Drain to Gate

Drain to Source

Gate to Source

±35V

25V

±35V

30mA

300mW

-65 to +150 °C

-55 to +135 °C

ds(on)

≤ 200Ω

d(on)

≤ 3.0ns

3N170, 171

SOT-143

TOP VIEW

3N170, 171

ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (V

= 0V unless otherwise stated)

SYMBOL

DSS

DS(on)

GS(th)

GSS

DSS

D(on)

ds(on)

rss

iss

CHARACTERISTIC

Drain to Source Breakdown Voltage

Drain to Source "On" Voltage

Gate to Source

Threshold Voltage

Gate Leakage Current

Drain Leakage Current "Off"

Drain Current "On"

Forward Transconductance

Drain to Source "On" Resistance

Reverse Transfer Capacitance

Input Capacitance

Drain to Body Capacitance

1000

200

1.3

5.0

3N170

3N171

1.0

1.5

MIN

2.0

3.0

µS

TYP

MAX

UNITS

CONDITIONS

= 10µA, V

= 0V

= 10mA, V

= 10V

= 10V, I

= 10µA

= -35V, V

= 0V

= 10V, V

= 0V

= 10V, V

= 10V

= 10V, I

= 2.0mA,

= 1.0kHz

= 10V, I

= 100µA,

= 1.0kHz

= 0V, V

= 0V,

= 1.0MHz

= 10V, V

= 0V,

= 1.0MHz

= 10V,

= 1.0MHz

Linear Integrated Systems

•

4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

Doc 201139 07/12/13

Rev#A15 ECN# 3N170_3N171

3N170-TO-72-4L-ROHS Related Products

	3N170-TO-72-4L-ROHS	3N171-TO-72-4L-ROHS	3N170-SOT-143-4L
Description	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Is it Rohs certified?	conform to	conform to	incompatible
Maker	Linear ( ADI )	Linear ( ADI )	Linear ( ADI )
Reach Compliance Code	compliant	compliant	compli
Configuration	Single	Single	Single
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	135 °C	135 °C	135 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.3 W	0.3 W	0.3 W
surface mount	NO	NO	YES
Base Number Matches	1	1	-

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