NDT456PS62Z datasheet, PDF - EEWORLD Datasheet

NDT456PS62Z: DescriptionPower Field-Effect Transistor, 7.5A I(D), 30V, 0.045ohm, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261; CategoryThe transistor; File Size136KB，1 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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NDT456PS62Z Overview

Power Field-Effect Transistor, 7.5A I(D), 30V, 0.045ohm, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261

Parameter Name	Attribute value
Maker	Fairchild
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
ECCN code	EAR99
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	7.5 A
Maximum drain-source on-resistance	0.045 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-261
JESD-30 code	R-PDSO-G4
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Base Number Matches	1

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