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HTDR-3

Description
0.05 A, 3000 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size41KB,2 Pages
ManufacturerEDI [Electronic devices inc.]
Download Datasheet Parametric View All

HTDR-3 Overview

0.05 A, 3000 V, SILICON, SIGNAL DIODE

HTDR-3 Parametric

Parameter NameAttribute value
MakerEDI [Electronic devices inc.]
package instructionR-PDIP-W2
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)25 V
JESD-30 codeR-PDIP-W2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Minimum operating temperature-55 °C
Maximum output current0.05 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage3000 V
Maximum reverse recovery time0.05 µs
surface mountNO
Terminal formWIRE
Terminal locationDUAL
HTDR-3
300 NANOSECOND AT 200
O
C
HIGH TEMPERATURE- FAST RECOVERY
HIGH VOLTAGE RECTIFIER DIODES
Exceptional high temperature Stability
U
up t o 20 0
O
C
Exceptionally low leakage
Small size
3KV PRV
Our proprietary diffusion and passivation process provides this unusual stability and no leakage drift at these elevated
temperatures. All diodes are subjected to 10 temperature cycles from -55 C to + 200 C.
O
O
EDI TYPE NO.
HTDR- 3
PEAK REVERSE VOL TAGE
3,000
O
DIMENSIONS
See Fig.2
ELECTRICAL CHARACTERISTICS (at T
A
=25 C Unless Otherwise Specified)
Average Rectified Forward Current @ 50 C, I
O
O
Average Rectified Forward Current @ 200 C, I
O
Max DC Reverse Current @ PRV @ 25
O
C, I
R
Max DC Reverse Current @ PRV @ 200 C,I
R
(See Note:1)
O
O
50 mA
1 mA
0.1
A
Max
30
A
max
18
A
typical
50ns.max at 25
O
C
300ns.max at 200
O
C
Max Reverse Recovery, T
rr
(See Fig.1 and 3)
Max. Fwd. Voltage Drop at 25 C and 10ma ,V
F
Forward Stability Tj 200 C
Ambient Operating and Storage Temperature Range
O
O
O
25 Max
V
(See Note 2)
-55
C
to+200
C
O
O
Note 1: I
R
at 200 C readings are taken in oil after voltage has been applied to device
for 5 minutes.
Note 2: All diodes are hot forward swept for forward stability to maximum temperature
of 200
O
C on dynamic display on curve trace oscilloscope.
EDI reserves the right to change these specifications at any time without notice.

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