Integrated Device Technology, Inc. All rights reserved. Advanced Datasheet for informational purposes only. Product specifications subject to change without notice.
NOT AN OFFER FOR SALE
The information
presented herein is subject to a Non-Disclosure Agreement (NDA) and is for planning purposes only. Nothing contained in this presentation, whether verbal or written, is intended as, or shall have the effect of, a sale
or an offer for sale that creates a contractual power of acceptance. "QDR SRAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress Semicondor, IDT, and Micron Tecnology, Inc."
DSC-6725/1
18/9Mb QDR-II
TM
x18 IDT70P3307/70P3337
SYNCHRONOUS Dual QDR-II
TM
Preliminary Datasheet
Commercial Temperatue Range
Pin Configuration
70P3307
70P3337
RM-576 Ball Flip Chip BGA
Top View
A1 BALL PAD CORNER
1
A
V
SS
2
V
SS
INC
INC
INC
3
ZQ
R
V
SS
V
DDQR
V
SS
4
V
SS
5
6
7
8
A3
R
A4
R
A1
R
V
SS
V
DDQR
V
SS
V
DDQR
9
10
BW
11
E0
R
E1
R
K
R
V
DDQR
V
SS
V
DD
V
SS
12
V
DD
V
SS
K
R
V
SS
V
DD
V
SS
V
DD
13
V
REFR
V
DD
C
R
V
SS
V
DD
V
SS
V
DD
14
INC
BW
15
A8
R
W
16
A9
R
A12
R
A11
R
V
DDQR
V
SS
V
DD
V
SS
17
A14
R
A13
R
A16
R
V
SS
V
DDQR
V
SS
V
DDQR
18
A15
R
A18
R
A17
R
V
DDQR
V
SS
V
DDQR
V
SS
19
V
DDQR
V
SS
20
V
SS
V
SS
21
22
23
V
SS
INC
INC
INC
INC
24
A
V
SS
V
SS
V
DDQR
A2
R
V
SS
EP
0
R
R
A5
R
A6
R
V
DDQR
V
SS
V
DD
V
SS
0R
M R ST D
OFFR
V
SS
INC
INC
INC
INC
INC
V
DDQR
V
SS
V
DDQR
V
SS
B
V
SS
V
DDQR
D
EPTH
INC
INC
INC
INC
INC
INC
A7
R
V
SS
V
DD
V
SS
V
DD
1R
R
B
V
SS
C
INC
V
SS
V
DDQR
INC
A0
R
C
R
V
DDQR
V
SS
V
DD
V
SS
A10
R
V
SS
V
DD
V
SS
V
DD
V
DDQR
V
DDQR
V
SS
V
DDQR
V
SS
V
DDQR
INC
INC
INC
INC
INC
C
D
INC
V
SS
V
DDQR
INC
D
E
INC
INC V
DDQR
INC
V
SS
V
SS
V
DDQR
INC V
DDQR
V
SS
INC
V
SS
V
DDQR
INC
E
F
V
SS
V
DDQR
INC
V
SS
D26
R
INC
F
G
V
REFR
INC V
DDQR
V
SS
V
SS
G
H
INC
D8
R
V
SS
Q8
R
Q6
R
Q4
R
Q2
R
Q0
R
Q8
L
Q6
L
Q4
L
CQ
R
V
SS
V
DDQR
V
SS
V
SS
V
DDQR
V
SS
V
DDQR
V
DD
V
SS
V
DD
V
SS
V
DD
V
SS
V
DD
V
SS
V
SS
V
DD
V
SS
V
DD
V
DD
V
SS
V
DD
V
SS
V
DD
V
SS
V
DD
V
SS
V
SS
V
DD
V
SS
V
DD
V
SS
V
DD
V
SS
V
DD
V
SS
V
DD
V
SS
V
DD
V
SS
V
DD
V
SS
V
DD
V
DD
V
SS
V
DD
V
SS
V
DD
V
SS
V
DD
V
SS
V
SS
V
DD
V
SS
V
DD
V
SS
V
DD
V
SS
V
DD
V
DD
V
SS
V
DD
V
SS
V
DD
V
SS
V
DD
V
SS
V
SS
V
DDQR
V
SS
V
DDQR
V
SS
V
DDQL
V
SS
V
DDQL
V
DDQR
V
SS
V
DDQR
V
SS
V
DDQR
V
SS
V
DDQL
V
SS
V
SS
V
DDQR
V
SS
V
DDQR
V
SS
V
DDQL
V
SS
V
DDQL
CQ
R
Q16
R
Q14
R
Q12
R
Q10
R
Q16
L
Q14
L
Q12
L
Q17
R
Q15
R
Q13
R
Q11
R
Q9
R
Q17
L
Q15
L
Q13
L
V
DDQR
V
SS
V
SS
D15
R
V
REFR
H
J
D7
R
D6
R
V
DDQR
D4
R
V
SS
Q7
R
V
DDQR
Q5
R
D16
R
J
K
D5
R
V
SS
V
DDQR
V
SS
V
DDQR
D13
R
V
SS
D11
R
D14
R
K
L
D3
R
D2
R
V
DDQR
D0
R
D8
L
D6
L
D4
L
Q3
R
V
DDQR
Q1
R
D12
R
L
M
D1
R
V
SS
V
DDQL
V
SS
V
DDQL
V
SS
V
DDQR
V
SS
V
DDQL
V
SS
V
DDQL
V
SS
V
DDQL
V
SS
V
DD
V
SS
V
DD
V
DDQR
D9
R
V
SS
D17
L
D10
R
M
N
D7
L
Q7
L
V
DDQL
Q5
L
V
SS
D16
L
N
P
D5
L
V
DDQL
D15
L
V
SS
D13
L
D14
L
P
R
D3
L
Q3
L
V
DDQL
V
SS
V
DDQL
V
SS
V
DDQL
D12
L
R
T
D1
L
D2
L
V
SS
D0
L
V
SS
V
DDQL
V
SS
Q2
L
Q0
L
INC
INC
INC
INC
INC
V
SS
V
SS
Q1
L
V
SS
V
SS
V
DDQL
V
SS
V
DDQL
V
SS
V
DDQL
A1
L
A4
L
A3
L
V
DD
V
SS
V
DD
V
SS
V
DD
V
SS
V
DD
V
SS
V
DD
V
SS
V
DD
V
SS
V
DD
V
SS
V
DD
V
SS
V
SS
K
L
V
DD
V
REFL
V
SS
V
DD
V
SS
V
DD
V
SS
V
SS
C
L
V
DD
V
SS
V
DD
V
SS
V
DD
V
SS
V
DD
V
SS
V
DD
V
SS
V
DD
V
SS
V
DDQL
V
SS
V
DDQL
V
SS
V
DDQL
V
SS
V
DDQL
V
SS
Q10
L
Q11
L
Q9
L
INC
INC
INC
INC
INC
V
DDQL
TCK
V
DDQL
D11
L
V
SS
V
DDQL
D9
L
V
SS
INC
INC
INC
INC
INC
V
SS
D10
L
T
U
V
REFL
CQ
L
V
DDQL
INC
INC
INC
V
SS
CQ
L
INC
INC
INC
INC
V
DDQL
V
SS
TR ST
INC
U
V
V
SS
V
REFL
V
W
INC
INC V
DDQL
INC
V
SS
V
DDQL
V
SS
V
SS
V
DDQL
V
SS
A0
L
V
SS
V
DD
V
SS
A6
L
A5
L
R
L
V
SS
V
DD
V
SS
V
DD
V
SS
V
DD
V
SS
A11
L
A12
L
A9
L
V
DDQL
V
SS
V
DDQL
A16
L
A13
L
A14
L
V
SS
V
DDQL
V
SS
A17
L
A18
L
A15
L
V
DDQL
V
SS
V
DDQL
V
SS
V
DDQL
V
SS
V
SS
V
DDQL
V
SS
V
DDQL
V
SS
W
Y
INC
INC
Y
AA
INC
INC V
DDQL
INC
INC
V
SS
V
SS
V
DDQL
ZQ
L
INC V
DDQL
V
DDQL
V
SS
TDI
TMS
V
DDQL
V
DDQL
A7
L
INC
BW
K
L
E1
L
E0
L
V
DDQL
V
DDQL
C
L
A10
L
INC
AA
AB
INC
INC
AB
AC
V
SS
V
DDQL
EP1
V
SS
A2
L
V
SS
V
DD
BW
1L
AC
W
L
D
OFFL
V
SS
AD
V
SS
0L
AD
INC
A8
L
TDO
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
6725 drw02
NOTE:
1. The package is 25mm x 25mm x 2.55mm with 1.0mm ball pitch; the customer will have to provide external airflow of 100LFM (0.5m/s) or higher at 250MHz.
2
January 29, 2009
18/9Mb QDR-II
TM
x18 IDT70P3307/70P3337
SYNCHRONOUS Dual QDR-II
TM
Preliminary Datasheet
Commercial Temperatue Range
Functional Description
As a memory standard, the (Quad Data Rate) QDR-II SRAM
interface has become increasingly common in high performance
networking systems. With the QDR-II interface/configuration, memory
throughput is increased without increasing the clock rate via the use
of two unidirectional buses on each of providing 2 ports of QDR-II
makes this a Dual-QDRII Static Ram two ports to transfer data without
the need for bus turnaround.
Dual QDR-II Static RAMs are high speed synchronous mem-
ories supporting two independent double-data-rate (DDR) read and
write data ports. This scheme allows simultaneous read and write
access for the maximum device throughput - two data items are
passed with each read or write. Four data word transfers occur per
clock cycle, providing quad-data-rate (QDR) performance on each
port. Comparing this with standard SRAM common I/O single data
rate (SDR) devices, a four to one increase in data access is achieved
at equivalent clock speeds. IDT70P3307/70P3337 Dual QDR-II Static
RAM devices, are capable of sustaining full bandwidth on both the
input and output buses simultaneously. Using independent buses for
read and write data access simplifies design by eliminating the need
for bidirectional buses. And all data are in two word bursts, with
addressing capability to the burst level.
Devices with QDR-II interfaces include network processor units
(NPUs) and field programmable gate arrays (FPGAs).
IDT70P3307/70P3337 Dual QDR-II Static RAMs support uni-
directional 18-bit read and write interfaces. These data inputs and
outputs operate simultaneously, thus eliminating the need for high-
speed bus turnarounds (i.e. no dead cycles are present). Access to
each port is accomplished using a common 18-bit address bus (17
bits for IDT70P3337). Addresses for reads and writes are latched on
rising edges of the K and
K
input clocks, respectively. The K and
K
clocks are offset by 90 degrees or half a clock cycle. Each address
location is associated with two 18-bit data words that burst sequentially
into or out of the device. Since data can be transferred into and out
of the device on every rising edge of the K and
K
clocks, memory
bandwidth is maximized while simplifying overall design through the
elimination of bus turnaround(s). IDT70P3307/70P3337 QDR-II Dual-
Port Static RAMs can support devices in a multi-drop configuration
(i.e. multiple devices connected to the same interface). Through this
capability, system designers can support compatible devices such as
NPUs and FPGAs on the same bus at the same time.
Using independent ports for read and write access simplifies
design by eliminating the need for bidirectional buses. All buses
associated with QDR-II Dual-Port Static RAMs are unidirectional and
can be optimized for signal integrity at very high bus speeds. The
QDR-II Dual-Port Static RAM has scalable output impedance on its
data output bus and echo clocks allowing the user to tune the bus for
low noise and high performance.
IDT70P3307/70P3337 Dual QDR-II Static RAMs have a single
DDR address bus per port with multiplexed read and write addresses.
All read addresses are received on the first half of the clock cycle and
all write addresses are received on the second half of the clock cycle.
The byte write signals are received on both halves of the clock cycle
simultaneously with the data they are controlling on the data input bus.
The Dual QDR-II Static RAM device has echo clocks, which
provide the user with a clock that is precisely timed to the data output
3
and tuned with matching impedance and signal quality. The user
can use the echo clock for downstream clocking of the data. For
the user, echo clocks eliminate the need to produce alternate clocks
with precise timing, positioning, and signal qualities to guarantee
data capture. Since the echo clocks are generated by the same
source that drives the data output, the relationship to the data is
NOT significantly affected by external parameters such as voltage,
temperature, and process as would be the case if the clock were
generated by an outside source. Thus the echo clocks are guar-
anteed to be synchronized with the data.
All interfaces of Dual QDR-II Static RAMs are HSTL, allow-
ing speeds beyond SRAM devices that use any form of TTL
interface. The interface can be scaled to higher voltages (up to
1.9V) to interface with 1.8V systems, if necessary. The device has
VDDQ pins and a separate Vref, allowing the user to designate the
interface operational voltage independent of the device core volt-
age of 1.8V VDD. Output impedance control pins allow the user
to adjust the drive strength to adapt to a wide range of loads and
transmission lines.
Clocking
The IDT70P3307/70P3337 has two sets of input clocks for
both the input and output, the K,
K
clocks and the C,
C
clocks. In
addition, the IDT70P3307/70P3337 has an output “echo” clock
pair, CQ and
CQ.
The K and
K
clocks are the primary device input clocks.
The K clock is used to clock in the control signals (R,
W,
E[1:0],
BW0-1),
the read address, and the first word of the data burst
(D[17:0]) during a write operation. The
K
clock is used to clock in
the control signals (BW
0-1
, E[1:0]), write address and the second
word of the data burst during a write operation (D[17:0]). In the
event that the user disables the C and
C
clocks, the K and
K
clocks
will also be used to clock the data out of the output register and
generate the echo clocks. The K and
K,
C and
C,CQ
and
CQ,
pairs
are offset by half a clock cycle from each other.
The C and
C
clocks may be used to clock the data out of
the output register during read operations and to generate the echo
clocks. C and
C
must be presented to the memory within the timing
tolerances as shown in the AC Electrical Characteristics Table
(Page 12). The output data from the IDT70P3307/70P3337 will be
closely aligned to the C and
C
input, through the use of an internal
DLL. When
C
is presented to the IDT70P3307/70P3337 the DLL
will have already internally clocked the data to arrive at the device
output simultaneously with the arrival of the
C
clock. The C and
second data item of the burst will also correspond.
Single Clock Mode
The IDT70P3307/70P3337 may be operated with a single
clock pair. C and
C
may be disabled by tying both signals high,
forcing the outputs and echo clocks to be controlled instead by the
K and
K
clocks.
DLL Operation
The DLL in the output structure of the IDT70P3307/70P3337
can be used to closely align the incoming clocks C and
C
with the
January 29, 2009
18/9Mb QDR-II
TM
x18 IDT70P3307/70P3337
SYNCHRONOUS Dual QDR-II
TM
Preliminary Datasheet
Commercial Temperatue Range
output of the data, generating very tight tolerances between the two.
The user may disable the DLL by holding
D
OFF
low. With the DLL off,
the C and
C
(or K and
K,
if C and
C
are not used) will directly clock
the output register of the IDT70P3307/70P3337. With the DLL off,
there will be a propagation delay from the time the clock enters the
device until the data appears at the output. QDR-II becomes QDRI
TM
with DLL off. First data out is referenced to C instead of
C.
Echo Clock
The echo clocks, CQ and
CQ,
are generated by the C and
C
clocks (or K,
K
if C,
C
are disabled). The rising edge of C generates
the rising edge of CQ, and the falling edge of
CQ.
The rising edge of
C
generates the rising edge of
CQ
and the falling edge of CQ. This
scheme improves the correlation of the rising and falling edges of the
echo clock and will improve the duty cycle of the individual signals.
The echo clock is very closely aligned with the data, guaran-
teeing that the echo clock will remain closely correlated with the data,
within the tolerances designated.
Normal QDR-II Read and Write Operations
The IDT70P3307/70P3337 Dual QDR-II Static RAM sup-
ports QDR-II burst-of-two read/write operations. Read operations are
initiated by holding the read port select (R) low, and presenting the
read address to the address port during the rising edge of K which
will latch the address. Data is delivered after the next rising edge of
the next
K
(t + 1), using C and
C
as the output timing references; or
K and
K,
if C and
C
are tied high.
The write operation is a standard QDR-II burst-of-two write
operation, except the data is not available to be read until the next
clock cycle (this is one cycle later than standard QDR-II SRAM).
Normal QDR write cycles are initiated by holding the write port select
(W) low at K rising edge. Also, the Byte Write inputs (BW0-1),
designating which bytes are to be written, need to be held low for both
the K and
K
clocks. On the rising edge of K the first word of the data
must also be present on the data input bus D[17:0] observing the
designated set up times. Upon the rising edge of K the first word of
the burst will be latched into the input register. After K has risen, and
the designated hold times observed, the second half of the clock cycle
is initiated by presenting the write address to the address bus A[X:0],
the
BW0-1
inputs for the second data word of the burst, and the second
data item of the burst to the data bus D[17:0]. Upon the rising edge
of
K,
the second word of the burst will be latched, along with the
designated address. Both the first and second words of the burst will
be written into memory as designated by the address and byte write
enables. The addresses for the write cycles is provided at the
K
rising
edge, and data is expected at the rising edge of K and
K,
beginning
at the same K that initiated the cycle.
Programmable Impedance
An external resistor, RQ, must be connected between the
ZQ pin on the IDT70P3307/70P3337 and tied to V
SS
to allow the
IDT70P3307/70P3337 to adjust its output drive impedance. The value
of RQ must be 5X the value of the intended drive impedance of the
IDT70P3307/70P3337. The allowable range of RQ to guarantee
impedance matching with a tolerance of +/- 15% is 175 ohms to 350
ohms. The output impedance is adjusted every 1024 clock cycles to
correct for drifts in supply voltage and temperature. If the user wishes
to drive the output impedance of the IDT70P3307/70P3337 to its
lowest value, the ZQ pin may be tied to V
DDQ
.
4
January 29, 2009
18/9Mb QDR-II
TM
x18 IDT70P3307/70P3337
SYNCHRONOUS Dual QDR-II
TM
Preliminary Datasheet
Commercial Temperatue Range
Pin Definitions
andSymbol
(-
1)
Pin Function
Input
Synchronous
Input
Synchronous
Input
Synchronous
Output
Synchronous
Input
Synchronous
Input
Synchronous
Input Clock
Input Clock
Input Clock
Input Clock
Output Clock
Description
Data input signals, sampled on the rising edge of K and
K
clocks during valid write operations
Byte Write Selects active LOW. Sampled on the rising edge of the K and again on the rising edge of
K
clocks during write operations. Used to select which byte is
written into the device during the current portion of the write operations. Bytes not written remain unaltered. All byte writes are sampled on the same edge as the
data. Deselecting a Byte Write Select will cause the corresponding byte of data to be ignored and not written in to the device.
BW
0
controls D[8:0],
BW
1
controls D[17:9].
Address Inputs. Read addresses are sampled on the rising edge of K clock during active read operations. Write addresses are sampled on the rising edge of
K
clock during active write operations. These address inputs are multiplxed, so that both a read and write operation can occur on the same clock cycle. These inputs
are ignored when the appropriate port is deselected.
Data Output signals. These pins drive out the requested data during a Read operation. Valid data is driven out on the rising edge of both the C and
C
clocks during
Read operations or K and
K
when operating in single clock mode. When the Read port is deselected, Q[17:0] are automatically tri-stated.
Write Control Logic, active LOW. Sampled on the rising edge of the positive input clock (K). When asserted active, a write operation in initiated. Deasserting will
deselect the Write port. Deselecting the Write port will cause D[17:0] to be ignored.
Read Control Logic, active LOW. Sampled on the rising edge of Positive Input Clock (K). When active, a Read operation is initiated. Deasserting will cause the
Read port to be deselected. When deselected, the pending access is allowed to complete and the output drivers are automatically tri-stated following the next
rising edge of the
C
clock. (D
OFFX
= 1). Each read access consists of a burst of two sequential transfers.
Positive Output Clock Input. C is used in conjunction with
C
to clock out the Read data from the device. C and
C
can be used together to deskew the flight times of
various devices on the board back to the controller. See application example for further details.
Negative Output Clock Input.
C
is used in conjunction with C to clock out the Read data from the device. C and
C
can be used together to deskew the flight times
of various devices on the board back to the controller. See application example for further details.
Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the device. Drives out data through Q[17:0] when in single clock mode.
All accesses are initiated on the rising edge of K.
Negative Input Clock Input.
K
is used to capture synchronous inputs being presented to the device. Drives out data through Q[17:0] when in single clock mode.
Synchronous Echo clock output. The rising edge of CQ is tightly matched to the synchronous data outputs and can be used as a data valid indication. CQ is free
running and does not stop when the output data is tri-stated.
Synchronous Echo Clock output. The rising edge of
CQ
is tightly matched to the synchronous data outputs and can be used as a data valid indication.
CQ
is free
running and does not stop wehen the output data is tri-stated.
Output Impedance Matching Input. This input is used to tune the device outputs to the system data bus impedance. Q[17:0] output impedance is set to 0.2 x RQ,
where RQ is a resistor connected between ZQ and ground. Alternately, this pin can be connected directly to V
DDQ
, which enables the minimum impedance mode.
This pin cannot be connected directly to GND or left unconnected.
EP[1:0] are used to program the Port Enable pins E[1:0]. EP[1:0] are programmed by tying the pins high or low on the board. If a customer does not want to use
Pins EP[1:0], then these pins should be tied low. Refer to Truth Table III for Port Enable pins.
Two Port Enable pins E[1:0] are provided to connect to the two MSB bits on the memory controller in order to cascade up to four IDT70P3307 devices. If a customer
does not want to use Pins E[1:0], then these pins should be tied low. Refer to Truth Table III for Port Enable pins. Also refer to Figure 1 showing cascade/multi-drop
using port-enable (E[1:0]) pins. E[1:0] are sampled on the rising edge of K for read operations and again on rising edge of
K
for write operations.
DLL Turn Off. When low this input will turn off the DLL inside the device. The AC timings with the DLL turned off will be different from those listed in this data sheet.
There will be an increased propagation delay from the incidence of C and
C
to Q, or K and
K
to Q as configured.
Master Reset pin. When held low will reset the device.
The DEPTH pin selects between the 18Mb and the 9Mb density, and it needs to be tied to V
DEPTH = V
DD
puts the device in a 9Mb configuration.
TDO pin for JTAG.
TCK pin for JTAG.
TDI pin for JTAG.
TMS pin for JTAG.
Reset pin for JTAG.
Should be tied to V
CC
or V
SS
only, or can be left as a floating pin.
DD
or
D[17:0]
X
BW
0
X
,
BW
1
X
A[18:0]
X(2)
Q[17:0]
X
W
X
R
X
C
X
C
X
K
X
K
X
CQ
X
CQ
X
ZQ
X
Output Clock
Input
EP[1:0]
E
X
[1:0]
Input
Input
Syncronous
D
OFFX
MRST
Input
Input
Asynchronous
Input
Output
Input
Input
Input
Input
Asynchronous
DEPTH
TDO
TCK
TDI
TMS
TRST
INC
V
REF
X
V
DD
V
SS
V
DDQX
Vss. DEPTH = Vss puts the device in the 18Mb configuration, and
Input
Reference
Power Supply
Ground
Power Supply
Reference Voltage input. Static input used to set the reference level for HSTL inputs as well as AC measurement points.
Power supply inputs to the core of the device. Should be connected to a 1.8V power supply.
Ground for the device. Should be connected to ground of the system.
Power supply for the outputs of the device. Should be connected to a 1.5V power supply for HSTL or scaled to the desired output voltage.
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51mcu
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