Trans Voltage Suppressor Diode
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | Microsemi |
package instruction | O-PALF-W2 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Maximum breakdown voltage | 106 V |
Minimum breakdown voltage | 86.7 V |
Shell connection | ISOLATED |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 code | O-PALF-W2 |
Maximum non-repetitive peak reverse power dissipation | 5000 W |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 175 °C |
Minimum operating temperature | -55 °C |
Package body material | PLASTIC/EPOXY |
Package shape | ROUND |
Package form | LONG FORM |
polarity | BIDIRECTIONAL |
Maximum power dissipation | 8 W |
Guideline | IEC-61000-4-2, 4-4, 4-5 |
Maximum repetitive peak reverse voltage | 78 V |
surface mount | NO |
technology | AVALANCHE |
Terminal form | WIRE |
Terminal location | AXIAL |
Base Number Matches | 1 |