Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
| APT6030BVFR_05 | APT6030BVFR | APT6030SVFR | |
|---|---|---|---|
| Description | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| Is it Rohs certified? | - | incompatible | incompatible |
| Maker | - | ADPOW | ADPOW |
| package instruction | - | FLANGE MOUNT, R-PSFM-T3 | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | - | unknow | unknown |
| Other features | - | AVALANCHE RATED | AVALANCHE RATED |
| Avalanche Energy Efficiency Rating (Eas) | - | 1300 mJ | 1300 mJ |
| Shell connection | - | DRAIN | DRAIN |
| Configuration | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | - | 600 V | 600 V |
| Maximum drain current (ID) | - | 21 A | 21 A |
| Maximum drain-source on-resistance | - | 0.3 Ω | 0.3 Ω |
| FET technology | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | - | R-PSFM-T3 | R-PSSO-G2 |
| JESD-609 code | - | e0 | e0 |
| Number of components | - | 1 | 1 |
| Number of terminals | - | 3 | 2 |
| Operating mode | - | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | - | RECTANGULAR | RECTANGULAR |
| Package form | - | FLANGE MOUNT | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | - | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | - | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | - | 300 W | 298 W |
| Maximum pulsed drain current (IDM) | - | 84 A | 84 A |
| Certification status | - | Not Qualified | Not Qualified |
| surface mount | - | NO | YES |
| Terminal surface | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | - | THROUGH-HOLE | GULL WING |
| Terminal location | - | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | - | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | - | SWITCHING | SWITCHING |
| Transistor component materials | - | SILICON | SILICON |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD