SB8150D-T3 datasheet, PDF - EEWORLD Datasheet

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SB8150D-T3: Description8 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB; CategoryDiscrete semiconductor diode; File Size38KB，4 Pages; ManufacturerWon-Top Electronics Co., Ltd.; Websitehttps://www.wontop.com/

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SB8150D-T3 Overview

8 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB

SB8150D-T3 Parametric

Parameter Name	Attribute value
Maker	Won-Top Electronics Co., Ltd.
Parts packaging code	D2PAK
package instruction	R-PSSO-G2
Contacts	4
Reach Compliance Code	compli
ECCN code	EAR99
Other features	FREE WHEELING DIODE, LOW POWER LOSS
application	EFFICIENCY
Shell connection	CATHODE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
Maximum non-repetitive peak forward current	150 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	8 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum repetitive peak reverse voltage	150 V
surface mount	YES
technology	SCHOTTKY
Terminal form	GULL WING
Terminal location	SINGLE

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WTE

POWER SEMICONDUCTORS

SB8150D

8.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

Low Forward Voltage Drop

Low Power Loss, High Efficiency

High Surge Current Capability

PIN 1

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

PAK/TO-263

Dim

Min

Max

9.80

10.40

9.60

10.60

4.40

4.80

8.50

9.10

2.80

—

1.00

1.40

—

0.90

1.20

1.40

0.30

0.70

2.35

2.75

All Dimensions in mm

Mechanical Data

Case: D

PAK/TO-263, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: See Diagram

Weight: 1.7 grams (approx.)

Mounting Position: Any

Marking: Type Number

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

PIN 1 +

PIN 3 -

Case

Maximum Ratings and Electrical Characteristics

=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current

= 100°C

Symbol

RRM

RWM

R(RMS)

SB8150D

Unit

150

105

8.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed

on rated load (JEDEC Method)

Forward Voltage

Peak Reverse Current

At Rated DC Blocking Voltage

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

Operating and Storage Temperature Range

= 8.0A

= 25°C

= 100°C

FSM

, T

STG

150

0.92

0.5

400

3.0

-65 to +150

°C/W

°C

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Thermal resistance junction to case mounted on heatsink.

SB8150D

1 of 4

SB8150D-T3 Related Products

	SB8150D-T3	SB8150D
Description	8 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB	8 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB

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