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SB8150D

Description
8 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB
Categorysemiconductor    Discrete semiconductor   
File Size38KB,4 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
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SB8150D Overview

8 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB

WTE
POWER SEMICONDUCTORS
SB8150D
Pb
8.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Features
!
!
Schottky Barrier Chip
C
J
Guard Ring Die Construction for
A
Transient Protection
!
Low Forward Voltage Drop
!
Low Power Loss, High Efficiency
B
!
High Surge Current Capability
D
E
PIN 1
3
!
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
G
Protection Applications
H

K
P
P
D
2
PAK/TO-263
Dim
Min
Max
9.80
10.40
A
9.60
10.60
B
4.40
4.80
C
8.50
9.10
D
2.80
E
1.00
1.40
G
0.90
H
1.20
1.40
J
0.30
0.70
K
2.35
2.75
P
All Dimensions in mm
Mechanical Data
!
!
!
!
!
!
!
Case: D
2
PAK/TO-263, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 1.7 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
PIN 1 +
PIN 3 -
+
Case
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@T
C
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
SB8150D
Unit
150
105
8.0
V
V
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed
on rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
@I
F
= 8.0A
@T
A
= 25°C
@T
A
= 100°C
I
FSM
V
FM
I
RM
C
j
R
JC
T
j
, T
STG
150
0.92
0.5
50
400
3.0
-65 to +150
A
V
mA
pF
°C/W
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to case mounted on heatsink.
SB8150D
1 of 4
© 2006 Won-Top Electronics

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Description 8 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB 8 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB

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