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SFF430M

Description
4.5 AMP 500 Volts 1.5 OHM N-Channel POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size172KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
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SFF430M Overview

4.5 AMP 500 Volts 1.5 OHM N-Channel POWER MOSFET

SFF430M Parametric

Parameter NameAttribute value
MakerSSDI
Parts packaging codeTO-254
package instructionFLANGE MOUNT, S-MSFM-P3
Contacts3
Reach Compliance Codecompli
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)4.5 A
Maximum drain current (ID)4.5 A
Maximum drain-source on-resistance1.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-254AA
JESD-30 codeS-MSFM-P3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)63 W
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON

SFF430M Related Products

SFF430M SFF430Z
Description 4.5 AMP 500 Volts 1.5 OHM N-Channel POWER MOSFET 4.5 AMP 500 Volts 1.5 OHM N-Channel POWER MOSFET
Maker SSDI SSDI
Parts packaging code TO-254 TO-254Z
package instruction FLANGE MOUNT, S-MSFM-P3 FLANGE MOUNT, S-MSFM-P3
Contacts 3 3
Reach Compliance Code compli compli
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 500 V 500 V
Maximum drain current (Abs) (ID) 4.5 A 4.5 A
Maximum drain current (ID) 4.5 A 4.5 A
Maximum drain-source on-resistance 1.5 Ω 1.5 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code S-MSFM-P3 S-MSFM-P3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material METAL METAL
Package shape SQUARE SQUARE
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 63 W 63 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form PIN/PEG PIN/PEG
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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