3000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
| Parameter Name | Attribute value |
| Number of terminals | 8 |
| Minimum breakdown voltage | 200 V |
| Processing package description | SOIC-8 |
| Lead-free | Yes |
| EU RoHS regulations | Yes |
| state | ACTIVE |
| packaging shape | RECTANGULAR |
| Package Size | SMALL OUTLINE |
| surface mount | Yes |
| Terminal form | GULL WING |
| terminal coating | MATTE TIN |
| Terminal location | DUAL |
| Packaging Materials | PLASTIC/EPOXY |
| structure | SINGLE WITH BUILT-IN DIODE |
| Number of components | 1 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Channel type | N-CHANNEL |
| field effect transistor technology | METAL-OXIDE SEMICONDUCTOR |
| operating mode | ENHANCEMENT |
| Transistor type | GENERAL PURPOSE SMALL SIGNAL |
| Maximum leakage current | 3 A |
| Maximum drain on-resistance | 0.1300 ohm |
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