BAW56DWT/R7 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> diode> BAW56DWT/R7

BAW56DWT/R7: DescriptionRectifier Diode, 4 Element, 0.15A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-6; CategoryDiscrete semiconductor diode; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

Download Datasheet Parametric View All

BAW56DWT/R7 Overview

Rectifier Diode, 4 Element, 0.15A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-6

BAW56DWT/R7 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	R-PDSO-G6
Contacts	6
Reach Compliance Code	compliant
Configuration	2 BANKS, COMMON ANODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.715 V
JESD-30 code	R-PDSO-G6
Number of components	4
Number of terminals	6
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	0.15 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.2 W
Maximum repetitive peak reverse voltage	100 V
Maximum reverse current	2.5 µA
Maximum reverse recovery time	0.004 µs
Reverse test voltage	75 V
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

BAW56DWT/R7 Preview

Download Datasheet

View All

BAS16TW/BAW56DW/BAV70DW/BAV99S

SURFACE MOUNT SWITCHING DIODES

VOLTAGE

FEATURES

• Fast switching speed.

• Surface mount package Ideally Suited for Automatic insertion

• High Conductance

•

0.054(1.35)

0.045(1.15)

0.030(0.75)

0.021(0.55)

0.087(2.20)

0.074(1.90)

0.010(0.25)

100 Volts

POWER

200mWatts

SOT-363

Unit

：

inch(mm)

0.056(1.40)

0.047(1.20)

MECHANICAL DATA

• Case: SOT-363, Pla stic

• Weight: approximately 0.006 grams

• Terminals: Solderable per MIL-STD-750, Method 2026

0.040(1.00)

0.031(0.80)

0.010(0.25)

0.003(0.08)

0.012(0.30)

0.005(0.15)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

C ambient temperature unless otherwise specified. For capacitive load, derate current by 20%.

PARAMETER

Marking Code

Reverse Voltage

Peak Reverse Voltage

Rectified Current (Average),Half Wave Rectification With

Resistive Load and f>50Hz

Peak Forward Surge Current, 1.0

µs

Power Dissipation Derate Above 25

SYMBOL

FS M

TOT

Fig.48

BAS16TW

16T

BAW56DW

100

150

4.0

200

0.715@I

=0.001A

0.855@I

=0.01A

1.0@I

=0.05A

1.25@I

=0.15A

0.03

2.5

1.5

4.0

625

-55 to +150

Fig.51

Fig.52

Fig.32

BAV70DW

0.044(1.10)

MAX.

BAV99S

0.087(2.20)

0.078(2.00)

0.018(0.45)

0.006(0.15)

UNITS

Maximum Forward Voltage

Maximum DC Reverse Current at 25V

75V

Maximum Junction Capacitance (Note 1)

Maximum Reverse Recovery Time (Note 2)

Typical Thermal Resistance

Junction Temperature Range

Circuit Figure

µA

C/W

NOTE : 1. Reverse Bias Voltage = 0. f=1MHz

2. I

=10mA to I

=1mA. V

=6V. Load=100Ω

REV.0.0-JAN.6.2009

PAGE . 1

Recommended Resources

Current amplifier circuit structure diagram

CW104-204-304 type adjustable negative output voltage stabilized power supply circuit

capacitance voltage measuring instrument

Tilt, level circuit diagram

Glucose-FET working circuit

Mechanical switch shaping circuit

How to implement a home wireless network based on Zigbee technology: Home equipment information and human information such as brain waves and pulse information are transmitted through wireless networks and transmitted to dedicated servers on the Internet through home n...; 灞波儿奔 RF/Wirelessly

[Environmental Expert’s Smart Watch] Part 15: Add ambient light, and all attributes are complete!: 1. Introduction I already have activity status, signal strength, temperature, humidity and air pressure, but I'm missing a light parameter. I saw that [justd0] has already transplanted it a few days a...; w494143467 onsemi and Avnet IoT Innovation Design Competition

TE Live at 3pm today | How to effectively respond to current challenges in the field of test and measurement: With the rise of cutting-edge technologies such as 5G, new energy vehicles, and driverless cars, the test and measurement industry will usher in a new round of growth. Test requirements have become mo...; EEWORLD社区 Test/Measurement

How to Make DSP Digital Oscillator Generate Phase-Shifted Sine Wave: [i=s] This post was last posted by Jacktang on 2019-4-30 17:28 Edit [/i] [size=4] There are many ways to generate digital phase-shifted signals. The traditional direct digital frequency synthesis (DDS...; Jacktang Microcontroller MCU

About the problem of modifying the frequency offset of CC2650 chip: Can CC2650 achieve carrier frequency offset by modifying register value? CC2400 can modify MDMCTRL register to modify frequency offset, but I don't know if CC2650 can do the same. Please help me, than...; SUNYOU Wireless Connectivity

MaixSense R329 development board Armbian system experience: Refer to the official tutorial: https://wiki.sipeed.com/hardware/zh/maixII/M2A/MaixSense/start/first.html After power-on, there is a character terminal on the LCD screen. In theory, you can operate it...; x1816 Domestic Chip Exchange

Popular Components