K4B2G1646Q-BCNB0 datasheet, PDF

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K4B2G1646Q-BCNB0: DescriptionDDR DRAM, 128MX16, 0.18ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96; Categorystorage storage; File Size733KB，67 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4B2G1646Q-BCNB0 Overview

DDR DRAM, 128MX16, 0.18ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96

K4B2G1646Q-BCNB0 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	BGA
package instruction	TFBGA, BGA96,9X16,32
Contacts	96
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	MULTI BANK PAGE BURST
Maximum access time	0.18 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	1066 MHz
I/O type	COMMON
interleaved burst length	8
JESD-30 code	R-PBGA-B96
length	13.3 mm
memory density	2147483648 bit
Memory IC Type	DDR DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	96
word count	134217728 words
character code	128000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature
organize	128MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA96,9X16,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	1.5 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	8
Maximum standby current	0.012 A
Maximum slew rate	0.245 mA
Maximum supply voltage (Vsup)	1.575 V
Minimum supply voltage (Vsup)	1.425 V
Nominal supply voltage (Vsup)	1.5 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	7.5 mm

K4B2G1646Q-BCNB0 Related Products

	K4B2G1646Q-BCNB0	K4B2G1646Q-BCK0	K4B2G1646Q-BCK00	K4B2G1646Q-BCH90	K4B2G1646Q-BIH90
Description	DDR DRAM, 128MX16, 0.18ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96	DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96	DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96	DDR DRAM, 128MX16, 0.255ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96	DDR DRAM, 128MX16, 0.255ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to
Parts packaging code	BGA	BGA	BGA	BGA	BGA
package instruction	TFBGA, BGA96,9X16,32	TFBGA, BGA96,9X16,32	TFBGA, BGA96,9X16,32	TFBGA, BGA96,9X16,32	TFBGA, BGA96,9X16,32
Contacts	96	96	96	96	96
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST
Maximum access time	0.18 ns	0.225 ns	0.225 ns	0.255 ns	0.255 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	1066 MHz	800 MHz	800 MHz	667 MHz	667 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON
interleaved burst length	8	8	8	8	8
JESD-30 code	R-PBGA-B96	R-PBGA-B96	R-PBGA-B96	R-PBGA-B96	R-PBGA-B96
length	13.3 mm	13.3 mm	13.3 mm	13.3 mm	13.3 mm
memory density	2147483648 bit	2147483648 bit	2147483648 bit	2147483648 bit	2147483648 bit
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	16	16	16	16	16
Number of functions	1	1	1	1	1
Number of ports	1	1	1	1	1
Number of terminals	96	96	96	96	96
word count	134217728 words	134217728 words	134217728 words	134217728 words	134217728 words
character code	128000000	128000000	128000000	128000000	128000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	85 °C
organize	128MX16	128MX16	128MX16	128MX16	128MX16
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA
Encapsulate equivalent code	BGA96,9X16,32	BGA96,9X16,32	BGA96,9X16,32	BGA96,9X16,32	BGA96,9X16,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192	8192
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
self refresh	YES	YES	YES	YES	YES
Continuous burst length	8	8	8	8	8
Maximum standby current	0.012 A	0.011 A	0.011 A	0.011 A	0.011 A
Maximum slew rate	0.245 mA	0.219 mA	0.219 mA	0.193 mA	0.193 mA
Maximum supply voltage (Vsup)	1.575 V	1.575 V	1.575 V	1.575 V	1.575 V
Minimum supply voltage (Vsup)	1.425 V	1.425 V	1.425 V	1.425 V	1.425 V
Nominal supply voltage (Vsup)	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V
surface mount	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	OTHER	OTHER	OTHER	OTHER	INDUSTRIAL
Terminal form	BALL	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	7.5 mm	7.5 mm	7.5 mm	7.5 mm	7.5 mm

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