934063255112 datasheet, PDF - EEWORLD Datasheet

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934063255112: DescriptionUHF BAND, Si, N-CHANNEL, RF POWER, MOSFET; CategoryDiscrete semiconductor The transistor; File Size161KB，11 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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934063255112 Overview

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

934063255112 Parametric

Parameter Name	Attribute value
Maker	NXP
package instruction	ROHS COMPLIANT, CERAMIC PACKAGE-2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	65 V
Maximum drain current (ID)	49 A
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-CDFP-F2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLATPACK
Polarity/channel type	N-CHANNEL
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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BLF6G10-200RN;

BLF6G10LS-200RN

Power LDMOS transistor

Rev. 02 — 21 January 2010

Product data sheet

1. Product profile

1.1 General description

200 W LDMOS power transistor for base station applications at frequencies from

700 MHz to 1000 MHz.

Table 1.

Typical performance

Typical RF performance at T

case

= 25

C in a class-AB production test circuit.

Mode of operation

2-carrier W-CDMA

[1]

(MHz)

869 to 894

(V)

L(AV)

(W)

(dB)

(%)

28.5

ACPR

(dBc)

−39

[1]

Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;

carrier spacing 5 MHz.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features

Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a

supply voltage of 28 V and an I

of 1400 mA:

Average output power = 40 W

Power gain = 20 dB

Efficiency = 28.5 %

ACPR =

−39

dBc

Easy power control

Integrated ESD protection

Enhanced ruggedness

High efficiency

Excellent thermal stability

Designed for broadband operation (700 MHz to 1000 MHz)

Internally matched for ease of use

Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances

(RoHS)

934063255112 Related Products

	934063255112	934063255118
Description	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Maker	NXP	NXP
package instruction	ROHS COMPLIANT, CERAMIC PACKAGE-2	ROHS COMPLIANT, CERAMIC PACKAGE-2
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Shell connection	SOURCE	SOURCE
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	65 V	65 V
Maximum drain current (ID)	49 A	49 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-CDFP-F2	R-CDFP-F2
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLATPACK	FLATPACK
Polarity/channel type	N-CHANNEL	N-CHANNEL
surface mount	YES	YES
Terminal form	FLAT	FLAT
Terminal location	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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