CD214A-T12ALF datasheet, PDF - EEWORLD Datasheet

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CD214A-T12ALF: DescriptionESD Suppressors / TVS Diodes TVS Unidirect Diode 12VOLT; CategoryDiscrete semiconductor diode; File Size138KB，5 Pages; ManufacturerBourns; Websitehttp://www.bourns.com; Environmental Compliance

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CD214A-T12ALF Overview

ESD Suppressors / TVS Diodes TVS Unidirect Diode 12VOLT

CD214A-T12ALF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	DO-214AC
package instruction	R-PDSO-C2
Contacts	2
Reach Compliance Code	not_compliant
ECCN code	EAR99
Factory Lead Time	14 weeks
Maximum breakdown voltage	15.3 V
Minimum breakdown voltage	13.3 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-214AC
JESD-30 code	R-PDSO-C2
JESD-609 code	e3
Maximum non-repetitive peak reverse power dissipation	400 W
Number of components	1
Number of terminals	2
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum power dissipation	5 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	12 V
surface mount	YES
technology	AVALANCHE
Terminal surface	Matte Tin (Sn)
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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Features

■

Lead free

RoHS compliant*

Surface Mount SMA package

Standoff Voltage: 5.0 to 170 volts

Power Dissipation: 400 watts

Model CD214A is currently available,

although not recommended for new

designs.

Model SMAJ

is preferred.

CD214A Transient Voltage Suppressor Diode Series

General Information

The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly

smaller electronic components.

Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AC (SMA)

size format. The Transient Voltage Suppressor series offers a choice of Working Peak Reverse Voltage from 5 V up to 170 V and Breakdown

Voltage up to 200 V. Typical fast response times are less than 1.0 ns for unidirectional devices and less than 5.0 ns for bidirectional devices

from 0 V to Minimum Breakdown Voltage.

Bourns

Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration

minimizes roll away.

Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)

Parameter

Symbol

(Note 1,2)

Value

Unit

Minimum Peak Pulse Power Dissipation (TP = 1 ms)

Peak Forward Surge Current

8.3ms Single Half Sine Wave Superimposed on Rated Load

(JEDEC Method)

(Note 3)

Steady State Power Dissipation @ TL = 75 °C

Maximum Instantaneous Forward Voltage @ IPP = 35 A

(For Unidirectional Units Only)

Operating Temperature Range

Storage Temperature Range

PPK

IFSM

PM(AV)

TSTG

400

1.0

3.5

-55 to +150

-55 to +175

Watts

Amps

Watts

Volts

°C

Non-repetitive current pulse, per Pulse Waveform graph and derated above TA = 25 °C per Pulse Derating Curve.

Thermal Resistance Junction to Lead.

8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).

Single Phase, Half Wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20 %.

How To Order

CD 214A - T 5.0 CA LF

Common Code

Chip Diode

Package

214A = SMA/DO-214AC

214B = SMB/DO-214AA

214C = SMC/DO-214AB

Model

T = Transient Voltage Suppressor Series

Working Peak Reverse Voltage

5.0 = 5.0 VRWM (Volts)

170 = 170 VRWM (Volts)

Suffix

A = 5 % Tolerance Device

CA = 5 % Tolerance Bidirectional Device

Terminations

LF = 100 % Sn (lead free)

Asia-Pacific:

Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116

Europe:

Tel: +41-41 768 5555 • Fax: +41-41 768 5510

The Americas:

Tel: +1-951 781-5500 • Fax: +1-951 781-5700

www.bourns.com

*RoHS Directive 2002/95/EC Jan 27 2003 including Annex

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

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