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FDD8444_F085

Description
MOSFET LOW VOLTAGE
CategoryDiscrete semiconductor    The transistor   
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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FDD8444_F085 Overview

MOSFET LOW VOLTAGE

FDD8444_F085 Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconductor
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeDPAK
package instructionROHS COMPLIANT, DPAK-3
Contacts3
Manufacturer packaging codeTO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Reach Compliance Codenot_compliant
ECCN codeEAR99
Samacsys DescriptionFairchild FDD8444_F085 N-channel MOSFET Transistor, 145 A, 40 V, 3-Pin DPAK
Avalanche Energy Efficiency Rating (Eas)535 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain current (Abs) (ID)145 A
Maximum drain current (ID)20 A
Maximum drain-source on-resistance0.0052 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)153 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
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