2SK3592-01SJ datasheet, PDF - EEWORLD Datasheet

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2SK3592-01SJ: DescriptionLow-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset; File Size252KB，4 Pages; ManufacturerFUJI; Websitehttp://www.fujielectric.co.jp/eng/fdt/scd/

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2SK3592-01SJ Overview

Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset

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2SK3592-01L,S,SJ

FUJI POWER MOSFET

200304

Super FAP-G Series

Features

High speed switching

Low on-resistance

No secondary breadown

Low driving power

Avalanche-proof

N-CHANNEL SILICON POWER MOSFET

Outline Drawings

(mm)

Applications

Switching regulators

UPS (Uninterruptible Power Supply)

DC-DC converters

See to P4

Maximum ratings and characteristic

Absolute maximum ratings

(Tc=25°C unless otherwise specified)

Symbol

Ratings

Unit

150

DSX *5

120

Continuous drain current

±57

Pulsed drain current

D(puls]

±228

Gate-source voltage

±30

Non-repetitive Avalanche current I

AS *2

Maximum Avalanche Energy

AS *1

272.5

kV/µs

Maximum Drain-Source dV/dt

/dt

Peak Diode Recovery dV/dt

dV/dt

kV/µs

°C

Max. power dissipation

Ta=25

1.67

°C

Tc=25

270

Operating and storage

+150

°C

-55 to +150

temperature range

stg

°C

*1 L=123µH, Vcc=48V, See to Avalanche Energy Graph

*2 Tch <150°C

*3 I

< -I

, -di/dt=50A/µs, Vcc < BV

DSS

, Tch < 150°C

*4 V

< 150V *5 V

=-30V

Item

Drain-source voltage

Equivalent circuit schematic

Drain(D)

Gate(G)

Source(S)

Electrical characteristics (T

=25°C unless otherwise specified)

Item

Drain-source breakdown voltaget

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Forward transcondutance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on time t

Turn-off time t

off

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Avalanche capability

Diode forward on-voltage

Reverse recovery time

Reverse recovery charge

Symbol

(BR)DSS

GS(th)

DSS

GSS

DS(on)

iss

oss

rss

(on)

(off)

Test Conditions

= 250µA

=0V

= 250µA

=150V V

=0V

=120V V

=0V

=±30V V

=0V

=20A V

=10V

=20A V

=25V

=75V

=0V

f=1MHz

=48V I

=20A

=10V

=10

Ω

=75V

=40A

=10V

L=123µH T

=25°C

=40A V

=0V T

=25°C

=40A V

=0V

-di/dt=100A/µs T

=25°C

=125°C

1940

310

1.10

0.14

0.77

Min.

150

3.0

Typ.

Max.

5.0

250

100

2910

465

22.5

1.65

Units

µA

mΩ

µs

µC

Thermalcharacteristics

Item

Thermal resistance

Symbol

th(ch-c)

th(ch-a)

Test Conditions

channel to case

channel to ambient

Min.

Typ.

Max.

0.463

75.0

Units

°C/W

www.fujielectric.co.jp/denshi/scd

2SK3592-01SJ Related Products

	2SK3592-01SJ	2SK3592-01S	2SK3592-01L
Description	Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset	Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset	STD LQg MOSFET

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