DIM200WBS12-A000
Single Switch IGBT Module
DS5862-1.2 March 2006
(LN24533)
FEATURES
•
•
•
•
10
µs
Short Circuit Withstand
Non Punch Through Silicon
Isolated Copper Baseplate
Lead Free construction
KEY PARAMETERS
V
CES
V
T
(typ)
I
C
(max)
I
C(PK)
(max)
± 1200V
4.3 V
200A
400A
APPLICATIONS
•
•
•
Matrix Converters
Brushless Motor Controllers
Frequency Converters
The Powerline range of high power modules
includes half bridge, chopper, dual, single and bi-
directional switch configurations covering voltages
from 600V to 3300V and currents up to 3600A.
The DIM200WBS12-A000 is a bi-directional 1200V,
n channel enhancement mode, insulated gate
bipolar transistor (IGBT) module. The IGBT has a
wide reverse bias safe operating area (RBSOA) plus
full 10µs short circuit withstand.
The module incorporates an electrically isolated
base plate and low inductance construction enabling
circuit designers to optimise circuit layouts and
utilise grounded heat sinks for safety.
Fig. 1 Half bridge circuit diagram
ORDERING INFORMATION
Order As:
DIM200WBS12-A000
Note: When ordering, please use the whole part number.
Outline type code: W
(See package details for further information)
Fig. 2 Module outline
.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1
/
10
www.dynexsemi.com
DIM200WBS12-A000
SEMICONDUCTOR
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the
package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings
may affect device reliability.
Tcase = 25° unless stated otherwise
C
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
It
V
isol
2
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I t value (IGBT arm)
Isolation voltage – per module
2
Test Conditions
V
GE
= 0V
Max.
1200
±20
Units
V
V
A
A
kW
kA S
V
2
T
case
= 80°
C
1ms, T
case
=115°
C
T
case
= 25° T
j
= 150°
C,
C
V
R
= 0, t
P
= 10ms, T
vj
= 125°
C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
200
400
1.435
6.25
2500
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
2
/
10
www.dynexsemi.com
DIM200WBS12-A000
SEMICONDUCTOR
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Critical Tracking Index):
Al
2
O
3
Copper
24mm
13mm
175
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
R
th(j-c)
Thermal resistance - transistor
Continuous dissipation –
junction to case
Continuous dissipation –
junction to case
-
-
87
°
C/kW
R
th(j-c)
Thermal resistance - diode
-
-
194
°
C/kW
R
th(c-h)
Thermal resistance – case to heatsink
(per module)
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
-
15
°
C/kW
T
j
Junction temperature
-
-
-
-40
-
-
-
-
-
-
-
150
125
125
5
5
°
C
°
C
°
C
Nm
Nm
T
stg
-
Storage temperature range
Screw torque
Mounting – M6
Electrical connections – M6
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
3
/
10
www.dynexsemi.com
DIM200WBS12-A000
SEMICONDUCTOR
ELECTRICAL CHARACTERISTICS
T
case
= 25°C unless stated otherwise.
Symbol
Parameter
Test Conditions
V
GE
= 0V, V
CE
= V
CES
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
-
-
-
I
1
I
2
-
-
Typ.
-
-
-
5.5
2.2
2.6
4.3
4.7
-
-
2.1
2.1
23
30
0.27
1375
1125
Max.
0.25
6
1
6.5
2.6
3.0
5.0
5.4
200
400
2.4
2.4
-
-
-
-
-
Units
mA
mA
µA
V
V
V
V
V
A
A
V
V
nF
nH
mΩ
A
A
I
ces
Collector cut-off current
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125°
C
I
ces
V
GE(TH)
Gate leakage current
Gate threshold voltage
V
GE
= ±20V, V
CE
= 0V
I
C
= 10mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 200A
V
CE(sat)
♦
Collector-emitter saturation voltage
V
GE
= 15V, I
C
= 200A, T
case
= 125°
C
V
GE
= 15V, I
C
= 200A
V
GE
= 15V, I
C
= 200A, T
case
= 125°
C
DC
t
p
= 1ms
I
F
= 200A
V
T
♦
I
F
I
FM
On-state voltage
(measured across terminals 1 &3)
Diode forward current
Diode maximum forward current
V
F
♦
Diode forward voltage
I
F
= 200A, T
case
= 125°
C
C
ies
L
M
R
INT
Input capacitance
Module inductance per arm
Internal resistance per arm
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
-
T
j
= 125° V
cc
= 900V,
C,
SC
Data
Short circuit. I
sc
t
p
≤
10µs,
V
CE(max)
= V
CES
- L*.di/dt
IEC 60747-9
Note:
♦
Measured at the power busbars and not the auxiliary terminals
* L is the circuit inductance + L
M
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
4
/
10
www.dynexsemi.com
DIM200WBS12-A000
SEMICONDUCTOR
ELECTRICAL CHARACTERISTICS
T
case
= 25°C unless stated otherwise.
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
O
Q
g
Q
rr
I
rr
E
REC
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
I
F
= 200A, V
R
= 600V,
dl
F
/dt = 2100A/µs
Test Conditions
I
C
= 200A
V
GE
= ±15V
V
CE
= 600V
R
G(ON)
= R
G(OFF)
= 4.7
Ω
L
∼
100nH
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
600
50
20
240
95
25
2
30
125
13
Max.
-
-
-
-
-
-
-
-
-
-
Units
ns
ns
mJ
ns
ns
mJ
µC
µC
A
mJ
T
case
= 125° unless stated otherwise.
C
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
I
F
= 200A, V
R
= 600V,
dl
F
/dt = 1900A/µs
Test Conditions
I
C
= 200A
V
GE
= ±15V
V
CE
= 600V
R
G(ON)
= R
G(OFF)
= 4.7
Ω
L
∼
100nH
Min.
-
-
-
-
-
-
-
-
-
Typ.
800
70
27
385
110
40
50
140
20
Max.
-
-
-
-
-
-
-
-
-
Units
ns
ns
mJ
ns
ns
mJ
µC
A
mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
5
/
10
www.dynexsemi.com
京公网安备 11010802033920号
EEWORLD
