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RA07N3340M-101

Description
RoHS Compliance , 330-400MHz 7.5W 9.6V 2 Stage Amp. For PORTABLE RADIO
CategoryWireless rf/communication    Radio frequency and microwave   
File Size93KB,8 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Environmental Compliance
Download Datasheet Parametric Compare View All

RA07N3340M-101 Overview

RoHS Compliance , 330-400MHz 7.5W 9.6V 2 Stage Amp. For PORTABLE RADIO

RA07N3340M-101 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMitsubishi
package instructionFLNG,1.0\"H.SPACE
Reach Compliance Codeunknow
Characteristic impedance50 Ω
structureMODULE
Maximum input power (CW)14.77 dBm
Number of functions1
Maximum operating frequency400 MHz
Minimum operating frequency330 MHz
Maximum operating temperature90 °C
Minimum operating temperature-30 °C
Package body materialPLASTIC/EPOXY
Encapsulate equivalent codeFLNG,1.0\"H.SPACE
power supply3.5,9.6 V
RF/Microwave Device TypesNARROW BAND HIGH POWER
technologyHYBRID
Maximum voltage standing wave ratio4
MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA07N3340M
BLOCK DIAGRAM
2
3
RoHS Compliance ,
330-400MHz 7.5W 9.6V 2 Stage Amp. For PORTABLE RADIO
DESCRIPTION
The RA07N3340M is a 7.5-watt RF MOSFET Amplifier
Module for 9.6-volt portable radios that operate in the 330- to
400-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 2.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
V
GG
=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power
with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
≅0
@ V
DD
=9.6V, V
GG
=0V)
• P
out
>7.5W @ V
DD
=9.6V, V
GG
=3.5V, P
in
=20mW
η
T
>43% @ P
out
=7W (V
GG
control), V
DD
=9.6V, P
in
=20mW
• Broadband Frequency Range: 330-400MHz
• Low-Power Control Current I
GG
=1mA (typ) at V
GG
=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
1
4
5
1
2
3
4
5
RF Input (P
in
)
Gate Voltage (V
GG
), Power Control
Drain Voltage (V
DD
), Battery
RF Output (P
out
)
RF Ground (Case)
PACKAGE CODE: H46S
RoHS COMPLIANCE
• RA07N3340M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever ,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA07N3340M-101
SUPPLY FORM
Antistatic tray,
25 modules/tray
RA07N3340M
MITSUBISHI ELECTRIC
1/8
24 Jan 2006

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Description RoHS Compliance , 330-400MHz 7.5W 9.6V 2 Stage Amp. For PORTABLE RADIO RoHS Compliance , 330-400MHz 7.5W 9.6V 2 Stage Amp. For PORTABLE RADIO RoHS Compliance , 330-400MHz 7.5W 9.6V 2 Stage Amp. For PORTABLE RADIO
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