SUM85N03-06P
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY
V
(BR)DSS
(V)
30
r
DS(on)
(W)
0.006 @ V
GS
= 10 V
0.009 @ V
GS
= 4.5 V
I
D
(A)
85
77
D
D
D
D
D
TrenchFETr Power MOSFET
175_C Junction Temperature
PWM Optimized for High Efficiency
New Package with Low Thermal Resistance
100% R
g
Tested
APPLICATIONS
D
TO-263
D
Buck Converter
−
High Side
−
Low Side
D
Synchronous Rectifier
−
Secondary Rectifier
G
G
D S
Top View
S
Ordering Information: SUM85N03-06P
SUM85N03-06P-E3 (Lead Free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche
Energy
a
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
c
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
30
"20
85
67
200
45
101
100
b
3.75
−55
to 175
Unit
V
A
mJ
W
_C
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount
c
Junction-to-Ambient
J
ti t A bi t
Junction-to-Case
Notes
a. Duty cycle
v
1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 71903
S-32523—Rev. B, 08-Dec-03
www.vishay.com
Free Air
R
thJA
R
thJC
Symbol
Limit
40
62.5
1.5
Unit
_C/W
C/W
1
SUM85N03-06P
Vishay Siliconix
SPECIFICATIONS (T
J
=25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
DS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
g
On-State Drain Current
a
I
DSS
I
D(on)
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 30 V, V
GS
= 0 V, T
J
= 175_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
Drain-Source On-State
Drain Source On State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 125_C
V
GS
= 10 V, I
D
= 20 A, T
J
= 175_C
V
GS
= 4.5 V, I
D
= 20 A
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 20 A
20
0.0072
120
0.0045
0.006
0.0085
0.011
0.009
S
W
30
1
3.0
"100
1
50
250
A
m
mA
V
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-Resistance
Total Gate Charge
b
Gate-Source Charge
b
Gate-Drain
Charge
b
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 0.3
W
I
D
^
50 A, V
GEN
= 10 V, R
g
= 2.5
W
V
DS
= 15 V, V
GS
= 10 V, I
D
= 50 A
,
,
0.5
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
3100
565
255
1.9
48
10
7.5
12
12
30
10
20
20
45
15
ns
3.1
65
nC
W
pF
Turn-On Delay Time
b
Rise Time
b
Turn-Off Delay Time
b
Fall Time
b
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
c
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
I
S
I
SM
V
SD
t
rr
I
F
= 30 A, V
GS
= 0 V
I
F
= 50 A, di/dt = 100 A/ms
1.2
35
100
200
1.5
70
A
V
ns
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Independent of operating temperature.
c. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 71903
S-32523—Rev. B, 08-Dec-03
SUM85N03-06P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
V
GS
= 10 thru 6 V
200
I
D
−
Drain Current (A)
I
D
−
Drain Current (A)
5V
150
120
100
80
60
40
20
2, 3 V
0
0
2
4
6
8
10
V
DS
−
Drain-to-Source Voltage (V)
0
0
1
2
3
4
5
V
GS
−
Gate-to-Source Voltage (V)
Transfer Characteristics
100
4V
T
C
= 125_C
25_C
50
−55_C
Transconductance
120
T
C
=
−55_C
25_C
g
fs
−
Transconductance (S)
80
125_C
60
40
20
0
0
20
40
60
80
100
r
DS(on)
−
On-Resistance (
W
)
100
0.0125
0.0100
0.0150
On-Resistance vs. Drain Current
V
GS
= 4.5 V
0.0075
V
GS
= 10 V
0.0050
0.0025
0.0000
0
20
40
60
80
100
120
I
D
−
Drain Current (A)
I
D
−
Drain Current (A)
4000
3500
3000
2500
2000
1500
1000
500
0
0
6
C
rss
Capacitance
C
iss
10
V
DS
= 15 V
I
D
= 50 A
Gate Charge
V
GS
−
Gate-to-Source Voltage (V)
8
C
−
Capacitance (pF)
6
4
C
oss
2
0
12
18
24
30
0
10
20
30
40
50
V
DS
−
Drain-to-Source Voltage (V)
Q
g
−
Total Gate Charge (nC)
www.vishay.com
Document Number: 71903
S-32523—Rev. B, 08-Dec-03
3
SUM85N03-06P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2.0
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 20 A
I
S
−
Source Current (A)
100
Source-Drain Diode Forward Voltage
r
DS(on)
−
On-Resistance (
W)
(Normalized)
1.6
1.2
T
J
= 150_C
T
J
= 25_C
10
0.8
0.4
0.0
−50
−25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
1.5
V
SD
−
Source-to-Drain Voltage (V)
T
J
−
Junction Temperature (_C)
40
Drain-Source Voltage Breakdown
vs. Junction Temperature
38
V
(BR)DSS
(V)
36
34
32
30
−50
−25
0
25
50
75
100
125
150
175
T
J
−
Junction Temperature (_C)
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Document Number: 71903
S-32523—Rev. B, 08-Dec-03
SUM85N03-06P
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Case Temperature
100
1000
Safe Operating Area, Junction-to-Case
10
ms
80
I
D
−
Drain Current (A)
I
D
−
Drain Current (A)
100
100
ms
1 ms
10 ms
100 ms
dc
1
T
C
= 25_C
Single Pulse
60
10
Limited
by r
DS(on)
40
20
0
0
25
50
75
100
125
150
175
T
C
−
Case Temperature (_C)
0.1
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Normalized Thermal Transient Impedance, Junction-to-Case
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
10
Square Wave Pulse Duration (sec)
Document Number: 71903
S-32523—Rev. B, 08-Dec-03
www.vishay.com
5
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