MRF6S21050LR3 datasheet, PDF - EEWORLD Datasheet

MRF6S21050LR3: DescriptionRF MOSFET Transistors HV6 W-CDMA 11.5W NI400L; CategoryDiscrete semiconductor The transistor; File Size427KB，11 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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RF MOSFET Transistors HV6 W-CDMA 11.5W NI400L

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	NXP
package instruction	FLANGE MOUNT, R-CDFM-F2
Contacts	2
Manufacturer packaging code	CASE 465E-04
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	68 V
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	S BAND
JESD-30 code	R-CDFM-F2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	225 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	151 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	AMPLIFIER
Transistor component materials	SILICON

	MRF6S21050LR3	MRF6S21050LSR3
Description	RF MOSFET Transistors HV6 W-CDMA 11.5W NI400L	RF MOSFET Transistors HV6 W-CDMA 11.5W NI400LS
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	NXP	NXP
package instruction	FLANGE MOUNT, R-CDFM-F2	FLATPACK, R-CDFP-F2
Contacts	2	2
Manufacturer packaging code	CASE 465E-04	CASE 465F-04
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Shell connection	SOURCE	SOURCE
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	68 V	68 V
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
highest frequency band	S BAND	S BAND
JESD-30 code	R-CDFM-F2	R-CDFP-F2
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	225 °C	225 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLATPACK
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	151 W	151 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	FLAT	FLAT
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	40	40
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON

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