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SS32HE3_A-H

Description
Schottky Diodes & Rectifiers 20 Volt 3.0 Amp 100 Amp IFSM
Categorysemiconductor    Discrete semiconductor   
File Size92KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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Schottky Diodes & Rectifiers 20 Volt 3.0 Amp 100 Amp IFSM

SS32HE3_A-H Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerVishay
Product CategorySchottky Diodes & Rectifiers
RoHSDetails
TechnologySi
QualificationAEC-Q101
PackagingCut Tape
PackagingReel
NumOfPackaging2
Factory Pack Quantity850
SS32, SS33, SS34, SS35, SS36
www.vishay.com
Vishay General Semiconductor
Surface Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
Available
• Low forward voltage drop
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
SMC (DO-214AB)
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
EAS
V
F
T
J
max.
Package
Diode variations
3.0 A
20 V, 30 V, 40 V, 50 V, 60 V
100 A
20 mJ
0.5 V, 0.75 V
150 °C
SMC (DO-214AB)
Single
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case:
SMC (DO-214AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
Polarity:
color band denotes the cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
L
(fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Non-repetitive avalanche energy at T
A
= 25 °C,
I
AS
= 2.0 A, L = 10 mH
Voltage rate of change (rated V
R
)
Operating junction temperature range
Storage temperature range
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
E
AS
dV/dt
T
J
T
STG
SYMBOL
SS32
S2
20
14
20
SS33
S3
30
21
30
SS34
S4
40
28
40
3.0
100
20
10 000
-55 to +150
-55 to +150
SS35
S5
50
35
50
SS36
S6
60
42
60
V
V
V
A
A
mJ
V/μs
°C
°C
UNIT
Revision: 21-Jul-17
Document Number: 88751
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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