EMC4DXV5T5G datasheet, PDF - EEWORLD Datasheet

EMC4DXV5T5G: DescriptionBipolar Transistors - Pre-Biased 50V Dual Common Base Collector NPN & PNP; Categorysemiconductor Discrete semiconductor; File Size136KB，11 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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Bipolar Transistors - Pre-Biased 50V Dual Common Base Collector NPN & PNP

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	ON Semiconductor
Product Category	Bipolar Transistors - Pre-Biased
RoHS	Details
Configuration	Dual Common Base and Collector
Transistor Polarity	NPN, PNP
Typical Input Resistor	47 kOhms
Typical Resistor Ratio	1, 0.47
Mounting Style	SMD/SMT
Package / Case	SOT-553-5
DC Collector/Base Gain hfe Min	80
Collector- Emitter Voltage VCEO Max	50 V
Continuous Collector Current	0.1 A
Peak DC Collector Current	100 mA
Pd - Power Dissipation	357 mW
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Packaging	Cut Tape
Packaging	MouseReel
Packaging	Reel
DC Current Gain hFE Max	80
Height	0.6 mm
Length	1.7 mm
Width	1.3 mm
Number of Channels	2 Channel
NumOfPackaging	3
Factory Pack Quantity	8000
Unit Weight	0.000099 oz

	EMC4DXV5T5G	EMC3DXV5T5	EMC2DXV5T1	EMC2DXV5T1G	EMC3DXV5T1	EMC4DXV5T1G
Description	Bipolar Transistors - Pre-Biased 50V Dual Common Base Collector NPN & PNP	Bipolar Transistors - Pre-Biased 50V Dual Common Base	Bipolar Transistors - Pre-Biased 50V Dual Common Base	Bipolar Transistors - Pre-Biased 50V Dual Common Base Collector NPN & PNP	Bipolar Transistors - Pre-Biased 50V Dual Common Base	Bipolar Transistors - Pre-Biased 50V Dual Common Base Collector NPN & PNP
Configuration	Dual Common Base and Collector	CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR	Dual Common Base and Collector	Dual Common Base and Collector	CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMPLEX

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