TK31E60XS1X datasheet, PDF - EEWORLD Datasheet

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TK31E60XS1X: DescriptionMOSFET DTMOSIV-High Speed 600V 88m (VGS=10V); Categorysemiconductor Discrete semiconductor; File Size252KB，11 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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MOSFET DTMOSIV-High Speed 600V 88m (VGS=10V)

TK31E60XS1X Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Toshiba Semiconductor
Product Category	MOSFET
RoHS	Details
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-220-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	7.7 A
Rds On - Drain-Source Resistance	73 mOhms
Vgs th - Gate-Source Threshold Voltage	3.5 V
Vgs - Gate-Source Voltage	30 V
Qg - Gate Charge	65 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Pd - Power Dissipation	230 W
Channel Mode	Enhancement
Height	15.1 mm
Length	10.16 mm
Transistor Type	1 N-Channel
Width	4.45 mm
Fall Time	6 ns
NumOfPackaging	1
Rise Time	22 ns
Factory Pack Quantity	50
Typical Turn-Off Delay Time	130 ns
Typical Turn-On Delay Time	55 ns
Unit Weight	0.211644 oz

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TK31E60X

MOSFETs

Silicon N-Channel MOS (DTMOS-H)

TK31E60X

1. Applications

•

Switching Voltage Regulators

2. Features

(1)

(2)

(3)

Low drain-source on-resistance: R

DS(ON)

= 0.073

Ω

(typ.)

by used to Super Junction Structure : DTMOS

High-speed switching properties with lower capacitance.

Enhancement mode: V

= 2.5 to 3.5 V (V

= 10 V, I

= 1.5 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain (Heatsink)

3: Source

TO-220

25

4. Absolute Maximum Ratings (Note) (T

= 25



unless otherwise specified)

Characteristics

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

Single-pulse avalanche energy

Avalanche current

Reverse drain current (DC)

Reverse drain current (pulsed)

Channel temperature

Storage temperature

Mounting torque

(Note 1)

= 25)

(Note 2)

(Note 1)

Symbol

DSS

GSS

DRP

stg

TOR

Rating

600

±30

30.8

123

230

437

7.7

30.8

123

150

-55 to 150

0.6

Nm



Unit

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2014-02

2014-02-28

Rev.2.0

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