FDU6680 datasheet, PDF - EEWORLD Datasheet

FDU6680: DescriptionMOSFET 30V N-Channel PowerTrench; CategoryDiscrete semiconductor The transistor; File Size118KB，6 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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MOSFET 30V N-Channel PowerTrench

Parameter Name	Attribute value
Is it Rohs certified?	conform to
parentfamilyid	1009461
Maker	Fairchild
Objectid	1991532499
Parts packaging code	TO-251AA
package instruction	IPAK-3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
compound_id	1018555
Avalanche Energy Efficiency Rating (Eas)	180 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	12 A
Maximum drain current (ID)	12 A
Maximum drain-source on-resistance	0.01 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251AA
JESD-30 code	R-PSIP-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT APPLICABLE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	56 W
Maximum pulsed drain current (IDM)	100 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT APPLICABLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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