MPS2907A Series
General Purpose
Transistors
PNP Silicon
Features
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COLLECTOR
3
2
BASE
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Value
−60
−60
−5.0
−600
625
5.0
1.5
12
−55
to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
TO−92
CASE 29
STYLE 1
12
1
2
1
EMITTER
•
These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter
−Base
Voltage
Collector Current
−
Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
3
STRAIGHT LEAD
BULK PACK
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
MPSx
x907x
YWW
G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
DEVICE MARKING
Device
MPS2907AG
MPS2907ARLG
MPS2907ARLRAG
MPS2907ARLRPG
Line 1
MPS
MPS2
MPS
MPS
Line 2
2907A
907A
2907
2907
Y
WW
G
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
January, 2013
−
Rev. 6
1
Publication Order Number:
MPS2907A/D
MPS2907A Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage (Note 1) (I
C
=
−10
mAdc, I
B
= 0)
Collector
−Base
Breakdown Voltage (I
C
=
−10
mAdc,
I
E
= 0)
Emitter
−Base
Breakdown Voltage (I
E
=
−10
mAdc,
I
C
= 0)
Collector Cutoff Current (V
CE
=
−30
Vdc, V
EB(off)
=
−0.5
Vdc)
Collector Cutoff Current
(V
CB
=
−50
Vdc, I
E
= 0)
(V
CB
=
−50
Vdc, I
E
= 0, T
A
= 150°C)
Base Current (V
CE
=
−30
Vdc, V
EB(off)
=
−0.5
Vdc)
ON CHARACTERISTICS
DC Current Gain
(I
C
=
−0.1
mAdc, V
CE
=
−10
Vdc)
(I
C
=
−1.0
mAdc, V
CE
=
−10
Vdc)
(I
C
=
−10
mAdc, V
CE
=
−10
Vdc)
(I
C
=
−150
mAdc, V
CE
=
−10
Vdc) (Note 1)
(I
C
=
−500
mAdc, V
CE
=
−10
Vdc) (Note 1)
Collector
−Emitter
Saturation Voltage (Note 1)
(I
C
=
−150
mAdc, I
B
=
−15
mAdc)
(I
C
=
−500
mAdc, I
B
=
−50
mAdc)
Base
−Emitter
Saturation Voltage (Note 1)
(I
C
=
−150
mAdc, I
B
=
−15
mAdc)
(I
C
=
−500
mAdc, I
B
=
−50
mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product (Notes 1 and 2),
(I
C
=
−50
mAdc, V
CE
=
−20
Vdc, f = 100 MHz)
Output Capacitance (V
CB
=
−10
Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance (V
EB
=
−2.0
Vdc, I
C
= 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn−On Time
Delay Time
Rise Time
Turn−Off Time
Storage Time
Fall Time
1. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2%.
2. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
(V
CC
=
−6.0
Vdc, I
C
=
−150
mAdc,
I
B1
= I
B2
= 15 mAdc) (Figure 2)
(V
CC
=
−30
Vdc, I
C
=
−150
mAdc,
I
B1
=
−15
mAdc) (Figures 1 and 5)
t
on
t
d
t
r
t
off
t
s
t
f
−
−
−
−
−
−
45
10
40
100
80
30
ns
ns
ns
ns
ns
ns
f
T
C
obo
C
ibo
200
−
−
−
8.0
30
MHz
pF
pF
h
FE
75
100
100
100
50
−
−
−
−
−
−
−
300
−
−0.4
−1.6
−1.3
−2.6
−
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
CBO
−60
−60
−5.0
−
−
−
−
−
−
−
−50
−0.01
−10
−50
Vdc
Vdc
Vdc
nAdc
mAdc
Symbol
Min
Max
Unit
I
B
nAdc
V
CE(sat)
Vdc
V
BE(sat)
Vdc
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2
MPS2907A Series
INPUT
Z
o
= 50
W
PRF = 150 PPS
RISE TIME
≤
2.0 ns
P.W. < 200 ns
0
-16 V
200 ns
50
1.0 k
INPUT
Z
o
= 50
W
PRF = 150 PPS
RISE TIME
≤
2.0 ns
P.W. < 200 ns
0
-30 V
200 ns
+15 V
-6.0 V
37
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
1N916
-30 V
200
1.0 k
1.0 k
50
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit
TYPICAL CHARACTERISTICS
1000
T
A
= 150°C
T
A
= 25°C
100
T
A
=
−55°C
V
CE
=
−10
V
hFE, DC CURRENT GAIN
10
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
1000
Figure 3. DC Current Gain
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
-1.0
-0.8
I
C
= -1.0 mA
-0.6
-10 mA
-100 mA
-500 mA
-0.4
-0.2
0
-0.005
-0.01
-0.02 -0.03 -0.05 -0.07 -0.1
Figure 4. Collector Saturation Region
-0.2 -0.3 -0.5 -0.7 -1.0
I
B
, BASE CURRENT (mA)
-2.0
-3.0
-5.0 -7.0 -10
-20 -30
-50
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3
MPS2907A Series
ORDERING INFORMATION
Device
MPS2907AG
MPS2907ARLG
MPS2907ARLRAG
MPS2907ARLRPG
Package
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
Shipping
†
5000 Units / Bulk
2000 / Tape & Reel
2000 / Ammo Pack
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
300
200
100
70
50
30
20
t
d
@ V
BE(off)
= 0 V
10
7.0
5.0
3.0
-5.0 -7.0 -10
-20 -30
-50 -70 -100
I
C
, COLLECTOR CURRENT
t
r
V
CC
= -30 V
I
C
/I
B
= 10
T
J
= 25°C
t, TIME (ns)
2.0 V
-200 -300 -500
Figure 5. Turn−On Time
500
300
200
t
f
t, TIME (ns)
100
70
50
30
20
10
7.0
5.0
-5.0 -7.0 -10
t′
s
= t
s
- 1/8 t
f
V
CC
= -30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
-20 -30
-50 -70 -100
-200 -300 -500
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Turn−Off Time
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4
MPS2907A Series
TYPICAL SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE
V
CE
= 10 Vdc, T
A
= 25°C
10
NF, NOISE FIGURE (dB)
10
f = 1.0 kHz
8.0
I
C
= -1.0 mA, R
s
= 430
W
-500
mA,
R
s
= 560
W
-50
mA,
R
s
= 2.7 kW
-100
mA,
R
s
= 1.6 kW
R
s
= OPTIMUM SOURCE RESISTANCE
NF, NOISE FIGURE (dB)
8.0
6.0
6.0
4.0
4.0
I
C
= -50
mA
-100
mA
-500
mA
-1.0 mA
2.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50
100
0
50
100
200
500 1.0 k 2.0 k
5.0 k 10 k
20 k
50 k
f, FREQUENCY (kHz)
Figure 7. Frequency Effects
f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
Figure 8. Source Resistance Effects
R
s
, SOURCE RESISTANCE (W)
100
C, CAPACITANCE (pF)
400
300
200
C
ibo
10
C
obo
100
80
60
40
30
20
-1.0 -2.0
V
CE
= -20 V
T
J
= 25°C
1
0.1
1
REVERSE VOLTAGE (V)
10
-5.0
-10
-20
-50
-100 -200
-500 -1000
I
C
, COLLECTOR CURRENT (mA)
Figure 9. Capacitances
1
I
C
/I
B
= 10
V
BE(ON)
, BASE−EMITTER ON
VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.8
0.6
0.4
0.2
1
Figure 10. Current−Gain
−
Bandwidth Product
T
A
=
−55°C
T
A
= 25°C
0.1
T
A
= 25°C
T
A
= 150°C
T
A
=
−55°C
T
A
= 150°C
0.01
0.001
Figure 11. Collector−Emitter Saturation
Voltage vs. Collector Current
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
0
0.0001
V
CE
=
−10
V
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
Figure 12. Base−Emitter Turn−ON Voltage vs.
Collector Current
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Microcontroller MCU
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