PT493FE0000F
PT493FE0000F
Opaque Resin, Medium Directivity Angle,
Long Terminal Darlington Phototransistor
■
Features
1.
2.
3.
4.
5.
6.
Side view detection package with long terminal
Plastic mold with opaque resin lens
Peak sensitivity wavelength: 860 nm TYP.
High sensitivity I
C
: 0.2 mA MIN. at E
V
= 2 lx
Medium acceptance angle (Δθ ±40° TYP.)
Lead free and RoHS directive compliant
■
Agency Approvals/Compliance
1. Compliant with RoHS directive (2002/95/EC)
2. Content information about the six substances
specified in “Management Methods for Control of
Pollution Caused by Electronic Information Prod-
ucts Regulation” (popular name: China RoHS)
(Chinese:
);
refer to page 6.
■
Applications
1.
2.
3.
4.
5.
Optoelectronic switches
Measuring equipment
Mechanical Systems
Office automation equipment
Audio visual equipment
Notice The content of data sheet is subject to change without prior notice.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
1
Sheet No.: D1-A02701EN
Date: November 30, 2007
©SHARP Corporation
PT493FE0000F
■
External Dimensions
2.8
1.55
R1.25
±
0.1
2 - C0.5
3.0
1.15
0.75
Gate
burr
0.3 MAX.
1.5
0.5
(4°)
(4°)
0.15 MAX.
φ1.5
E. PIN
Resin
burr
1.0 MAX.
4.0
(4°)
(4°)
Resin
burr
0.2 MAX.
(1.7)
1.4
(18.5)
2-0.8
(2-0.6)
(3.0)
40.0
2-0.4
+0.3
-0.1
2-0.45
-0.1
+0.3
(2.54)
(6°)
(6°)
Terminal connection
1
2
1
(6°)
2.8
(6°)
2
Pin Arrangement
No.
Name
Emitter
Collector
NOTES:
1. Units: mm
2. Unspecified tolerence: ±0.2 mm
3. ( ): Reference dimensions
4. Package: Black (visible light cut-off) epoxy resin
5. Mold
burrs
(0.05 mm MAX.) are not included in outline dimensions
6. Resin protrusion: 1.0 mm MAX.
7. Lead step is 1.4 mm MAX. from the part’s resin
0.5 MIN.
1
2
Sheet No.: D1-A02701EN
2
PT493FE0000F
■
Absolute Maximum Ratings
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Soldering temperature *1
Symbol
V
CEO
V
ECO
I
C
P
C
Topr
Tstg
Tsol
35
6
50
75
-25 to +85
-40 to +85
260
(Ta = 25°C)
Rating
Unit
V
V
mA
mW
°C
°C
°C
*
1 3 s (MAX.) at 1.4 mm from resin edge.
■
Electro-optical Characteristics
Parameter
Collector current
Dark current
Collector-emitter saturation voltage
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Peak sensitivity wavelength
Response time (Rise)
Response time (Fall)
Half-intensity angle
Symbol
I
C
I
CEO
V
CE
(sat)
BV
CEO
BV
ECO
λp
tr
tf
θ
Conditions *1
Ev = 2 lx, V
CE
= 2 V
Ee = 0, V
CE
= 10 V
Ee = 1 mW/cm
2
, I
C
= 0.8 mA
I
C
= 0.1 mA, Ee = 0
I
E
= 0.01 mA, Ee = 0
–
V
CE
= 2 V, I
C
= 5 mA,
R
L
= 100
Ω
–
MIN.
0.2
–
–
35
6
–
–
–
–
TYP.
–
–
–
–
–
860
400
300
±40
MAX.
0.8
1.0
1.0
–
–
–
2000
1500
–
(Ta = 25°C)
Unit
mA
µA
V
V
V
nm
µs
µs
degrees
*
1 Ev and Ee: Irradiance by CIE standard light source A (tungsten lamp)
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
80
75
70
60
50
40
30
20
15
10
0
-25
Fig. 2 Spectral Sensitivity (TYP.)
100
Ta = 25°C
80
Relative sensitivity (%)
Collector power dissipation Pc (mW)
60
40
20
0
400
500
600
700
800
900
1000
1100
Wavelength
λ
(nm)
0
25
50
75
85
100
Ambient temperature Ta (°C)
Sheet No.: D1-A02701EN
3
PT493FE0000F
Fig. 3 Collector Dark Current vs.
Ambient Temperature
10
-6
V
CE
= 10
V
10
-7
Collector dark current I
CEO
(A)
Fig. 5 Relative Collector Current vs.
Ambient Temperature
175
V
CE
= 2
V
Ev = 2 lx
Relative collector current (%)
150
10
-8
10
-9
10
-10
10
-11
10
-12
10
-13
-25
0
25
50
75
100
125
100
75
50
-25
0
25
50
75
100
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Fig. 4 Collector Current vs. Irradiance
V
CE
= 2
V
Ta = 25°C
Fig. 6 Collector Current vs.
Collector-Emitter Voltage
50
Ta = 25°C
45
Collector current I
C
(mA)
40
Collector current I
C
(mA)
10
35 Ee =
0.5 mW/cm
2
30
25
20
15
10
1
10
-1
Irradiance Ee (mW/cm
2
)
1
5
0
0
1
Pc (MAX.)
0.25 mW/cm
2
0.2 mW/cm
2
0.15 mW/cm
2
0.1 mW/cm
2
3
4
5
6
7
2
Collector-emitter
voltage V
CE
(V)
Sheet No.: D1-A02701EN
4
PT493FE0000F
Fig. 7 Response Time vs. Load Resistance
1000
V
CC
= 2
V
I
C
= 5 mA
Ta = 25°C
tr
tf
Fig. 9 Sensitivity Diagram (TYP.)
Ta = 25°C
-20°
-10°
0°
100
Relative radiant intensity (%)
-30°
+30°
80
+10°
+20°
Reponse time (µs)
100
-40°
td
10
ts
-50°
-60°
-70°
1
1
10
Load resistance RL (Ω)
100
500
-80°
-90°
60
+40°
40
+50°
+60°
20
+70°
+80°
+90°
0
Angular displacement
θ
Fig. 8 Test Circuit for Response Time
Input
Fig. 10 Collector-to-Emitter Saturation
Voltage vs. Irradience
Collector-emitter Saturation
Voltage V
CE(sat)
(V)
2.2
2.0
1.8
1 mA
2 mA
3 mA
5 mA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.01
0.1
Irradiance Ee (mW/cm
2
)
1
I
C
= 0.5 mA
T
a
= 25°C
90%
Output
Output
V
CC
R
L
td
tr
ts
tf
10%
Graph data is for reference only and is not guaranteed data.
Sheet No.: D1-A02701EN
5
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