A Business Partner of Renesas Electronics Corporation.
Preliminary
PS2514-1,PS2514L-1
HIGH-SPEED SWITCHING/HIGH ISOLATION
VOLTAGE PHOTOCOUPLER SERIES
DESCRIPTION
Data Sheet
R08DS0012EJ0100
Rev.1.00
Mar 19, 2012
silicon phototransistor, enabling relatively high switching speed with high load resistor of several kΩ.
surface mount.
The PS2514-1 and PS2514L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN
The PS2514-1 is in a plastic DIP (Dual In-line Package) and the PS2514L-1 is lead bending type (Gull-wing) for
FEATURES
• High collector to emitter voltage (V
CEO
= 40 V)
• Guaranteed maximum switching speed
(t
off
≤
25
μ
s @ I
F
= 5 mA, V
CC
= 5 V, R
L
= 5 kΩ)
4
• High isolation voltage (BV = 5 000 Vr.m.s.)
PIN CONNECTION
(Top View)
3
• High-speed switching (t
on
= 15
μ
s TYP. @ I
F
= 5 mA, V
CC
= 5 V, R
L
= 5 kΩ)
• Embossed tape product: PS2514L-1-F3: 2 000 pcs/reel
(t
off
= 15
μ
s TYP. @ I
F
= 5 mA, V
CC
= 5 V, R
L
= 5 kΩ)
1
2
1. Anode
2. Cathode
3. Emitter
4. Collector
<R>
<R>
• Safety standards
• Pb-Free product
• CQC approved: CQC11001056759/CQC11001056758
CQC11001056865/CQC11001057073
• CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
• UL approved: No. E72422
• DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40008862 (Option)
APPLICATIONS
• Power supply
• FA equipment
• Electronic electricity meter
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
Page 1 of 14
A Business Partner of Renesas Electronics Corporation.
PS2514-1,PS2514L-1e
PACKAGE DIMENSIONS (UNIT: mm)
DIP Type
PS2514-1
4.6±0.35
4 3
6.5
+0.7
–0.5
1 2
7.62
3.2±0.4 4.15±0.4
3.5±0.3
1.25±0.15
0 to 15°
+0.1
0.25
–0.05
0.50±0.10
0.25
M
2.54
Lead Bending Type
PS2514L-1
4.6±0.35
4
6.5
+0.7
–0.5
3
1
3.5±0.3
2
0.25
+0.1
–0.05
0.1
+0.1
–0.05
1.25±0.15
0.25
M
2.54
0.15
0.9±0.25
9.60±0.4
PHOTOCOUPLER CONSTRUCTION
Parameter
Air Distance
Outer Creepage Distance
Inner Creepage Distance
Isolation Thickness
Unit (MIN.)
7 mm
7 mm
4 mm
0.3 mm
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
Page 2 of 14
A Business Partner of Renesas Electronics Corporation.
PS2514-1,PS2514L-1e
<R>
MARKING EXAMPLE
No. 1 pin
Mark
R
2514
NR131
Company Initial
Type Number
Assembly Lot
N
R
1 31
Week Assembled
Year Assembled
(Last 1 Digit)
In-house Code
CTR Rank Code
Package
Pb-Free and
Halogen Free
New PKG
Made in Japan Made in Taiwan
R
Y
Remark
"PS" and "-1" are omitted from original type number.
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
Page 3 of 14
A Business Partner of Renesas Electronics Corporation.
PS2514-1,PS2514L-1e
<R>
ORDERING INFORMATION
Part Number
Order Number
Solder Plating
Specification etc.
Pb-Free and
Halogen Free
Embossed Tape 2 000 pcs/reel
Magazine case 100 pcs
Packing Style
Safety Standard
Approval
Application Part
*1
Number
PS2514-1
PS2514L-1
PS2514L-1-F3
PS2514-1-V
PS2514L-1-V
PS2514-1Y-A
PS2514L-1Y-A
PS2514L-1Y-F3-A
PS2514-1Y-V-A
PS2514L-1Y-V-A
Magazine case 100 pcs
Standard products PS2514-1
(UL, CSA, CQC
approved)
DIN EN60747-5-2
(VDE0884 Part2)
PS2514-1
PS2514L-1
PS2514L-1
PS2514L-1-V-F3 PS2514L-1Y-V-F3-A
Embossed Tape 2 000 pcs/reel
approved
(Option)
*1
For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, unless otherwise specified)
Parameter
Diode
Reverse Voltage
Forward Current (DC)
Power Dissipation Derating
Power Dissipation
Peak Forward Current
Transistor
*1
Symbol
V
R
I
F
Ratings
6
30
1.5
150
0.5
40
0.6
20
1.5
150
5 000
−55
to +100
−55
to +150
Unit
V
mA
mW/°C
mW
A
V
V
mA
mW/°C
mW
Vr.m.s.
°C
°C
Δ
P
D
/°C
P
D
I
FP
V
CEO
V
ECO
I
C
Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
Power Dissipation Derating
Power Dissipation
Δ
P
C
/°C
P
C
BV
T
A
T
stg
Isolation Voltage
*2
Operating Ambient Temperature
Storage Temperature
*1
PW = 100
μ
s, Duty Cycle = 1%
*2
AC voltage for 1 minute at T
A
= 25°C, RH = 60% between input and output.
Pins 1-2 shorted together, 3-4 shorted together.
RECOMMENDED OPERATING CONDITIONS
Parameter
Input Current
Symbol
I
F
MIN.
5
TYP.
6
MAX.
7
Unit
mA
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
Page 4 of 14
A Business Partner of Renesas Electronics Corporation.
PS2514-1,PS2514L-1e
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Parameter
Diode
Forward Voltage
Reverse Current
Terminal Capacitance
Transistor
Collector to Emitter Dark
Current
Current Transfer Ratio
Collector Saturation
Voltage
Isolation Resistance
Isolation Capacitance
Turn-on Time
*1
Symbol
V
F
I
R
C
t
I
CEO
I
F
= 5 mA
V
R
= 5 V
Conditions
MIN.
TYP.
1.1
MAX.
1.3
5
Unit
V
μ
A
pF
V = 0 V, f = 1.0 MHz
V
CE
= 40 V, I
F
= 0 mA
10
100
nA
Coupled
CTR
V
CE (sat)
I
F
= 5 mA, V
CE
= 5 V
I
F
= 5 mA, I
C
= 1 mA
50
125
200
0.35
%
V
Ω
R
I-O
C
I-O
t
on
t
off
V
I-O
= 1.0 kV
DC
V = 0 V, f = 1.0 MHz
V
CC
= 5 V, I
F
= 5 mA, R
L
= 5 kΩ
10
11
0.5
15
15
25
25
pF
μ
s
Turn-off Time
*1
*1
Test circuit for switching time
V
CC
Input
Pulse Input
I
F
R
L
= 5 kΩ
V
OUT
t
on
t
d
t
s
90%
50
Ω
Output
10%
t
r
t
f
t
off
PW = 100
μ
s
Duty Cycle = 1/10
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
Page 5 of 14
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