MIO 1200-25E10
IGBT Module
Single switch
Short Circuit SOA Capability
Square RBSOA
C
C'
C
C
I
C80
= 1200 A
= 2500 V
V
CES
V
CE(sat) typ.
= 2.5 V
G
E'
E
E
E
IGBT
Symbol
V
CES
V
GES
I
C80
I
CM
t
SC
T
C
= 80°C
t
p
= 1 ms; T
C
= 80°C
V
CC
= 1800 V; V
CEM CHIP
=
<
2500 V;
V
GE
< 15 V; T
VJ
< 125°C
Conditions
Conditions
V
GE
= 0 V
Maximum Ratings
2500
-o
1200
2400
10
±
20
e
6
u
V
V
A
A
µs
3.4
7.5
V
V
V
120 mA
500 nA
ns
ns
ns
ns
mJ
mJ
nF
nF
nF
µC
0.009 K/W
s
Symbol
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oes
C
res
Q
ge
R
thJC
I
C
= 240 mA; V
CE
= V
GE
V
CE
= 2500 V; V
GE
= 0 V; T
VJ
= 125°C
V
CE
= 0 V; V
GE
=
±
20 V; T
VJ
= 125°C
365
250
980
345
1150
1250
186
13.7
3.0
12.2
Inductive load; T
VJ
= 125°C; V
GE
= ±15 V;
V
CC
= 1250V; I
C
= 1200A; R
G
= 1.5Ω; L
σ
= 100nH
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
I
C
= 1200 A; V
CE
= 1250 V; V
GE
=
±
15 V
Collector emitter saturation voltage is given at chip level
IXYS reserves the right to change limits, test conditions and dimensions.
20110119a
© 2011 IXYS All rights reserved
p
h
V
CE(sat)
I
C
= 1200 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
a
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
2.5
3.1
t
Features
• NPT³ IGBT
- Low-loss
- Smooth switching waveforms for
good EMC
• Industry standard package
- High power density
- AISiC base-plate for high power
cycling capacity
- AIN substrate for low thermal resistance
Typical Applications
• AC power converters for
- industrial drives
- windmills
- traction
• LASER pulse generator
1-6
MIO 1200-25E10
Diode
Symbol
I
F80
I
FSM
Conditions
T
C
= 80°C
V
R
= 0 V; T
VJ
= 125°C; t
p
= 10 ms; half-sinewave
Maximum Ratings
1200
11000
A
A
Symbol
V
F
I
RM
t
rr
Q
RR
E
rec
R
thJC
Conditions
I
F
= 1200 A;
T
VJ
= 25°C
T
VJ
= 125°C
Characteristic Values
min.
typ. max.
1.75
1.8
1180
970
1150
990
V
V
A
ns
µC
mJ
0.017 K/W
V
CC
= 1250 V; I
C
= 1200 A;
V
GE
= ±15 V; R
G
= 1.5
Ω;
T
VJ
= 125°C
Inductive load; L
σ
= 100nH
Symbol
T
JM
T
VJ
T
stg
V
ISOL
M
d
Conditions
max. junction temperature
Operating temperature
Storage temperature
50 Hz
Mounting torque
-o
e
s
23
19
33
33
10
0.085
0.006
1500
+150
-40...+125
-40...+125
5000
4-6
8 - 10
Module
Maximum Ratings
°C
°C
°C
V~
Nm
Nm
Base-heatsink, M6 screws
Main terminals, M8 screws
Symbol
d
A
d
S
L
σ
R
term-chip
*
)
R
thCH
Weight
Conditions
Clearance distance
Surface creepage
distance
a
h
terminal to base
terminal to terminal
terminal to base
terminal to terminal
Characteristic Values
min.
typ. max.
mm
mm
mm
mm
nH
m
Ω
K/W
g
Module stray inductance, C to E terminal
Resistance terminal to chip
per module;
λ
grease = 1 W/m•K
*
)
V = V
CE(sat)
+ R
term-chip
· I
C
resp. V = V
F
+ R
term-chip
· I
F
p
u
t
20110119a
Forward voltage is given at chip level
© 2011 IXYS All rights reserved
2-6
MIO 1200-25E10
2400
2200
2000
1800
1600
1400
I
C
[A]
1200
1000
800
600
400
200
0
0
1
2
3
V
CE
[V]
4
5
6
9V
I
C
[A]
17 V
15 V
13 V
11 V
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
Tvj = 25°C
200
0
0
1
2
3
V
CE
[V]
4
5
6
T
vj
= 125 °C
17 V
15 V
13 V
11 V
9V
Fig. 1 Typical output characteristics, chip level
2400
2200
2000
25 °C
1800
1600
1400
I
C
[A]
1200
1000
800
600
400
200
0
0
1
2
V
CE
[V]
125 °C
Fig. 2 Typical output characteristics, chip level
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
1
2
3
4
5
6
7
8
9 10 11 12 13
V
GE
[V]
125 °C
25 °C
V
GE
= 15 V
3
4
h
Fig. 3 Typical onstate characteristics, chip level
20
a
s
5
e
p
-o
I
C
[A]
u
Fig. 4 Typical transfer characteristics, chip level
1000
t
C
ies
V
GE
= 0 V
f
OSC
= 1 MHz
V
OSC
= 50 mV
C
oes
C
res
5
10
15
20
V
CE
[V]
25
30
35
V
CC
= 1250
15
V
CC
= 1750
100
V
GE
[V]
10
C [nF]
10
5
I
C
= 1200 A
T
vj
= 25 °C
0
0
2
4
6
Q
g
[µC]
8
10
12
1
0
Fig. 5 Typical gate charge characteristics
© 2011 IXYS All rights reserved
Fig. 6 Typical capacitances vs
collector-emitter voltage
20110119a
3-6
MIO 1200-25E10
3.5
V
CC
= 1250 V
R
G
= 1.5 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 100 nH
6.0
V
CC
= 1250 V
I
C
= 1200 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 100 nH
E
on
3.0
5.0
E
on
2.5
4.0
2.0
E
off
1.5
E
on
, E
off
[J]
E
on
, E
off
[J]
3.0
2.0
1.0
E
off
0.5
1.0
0.0
0
1000
I
C
[A]
2000
3000
0.0
0
5
10
R
G
[ohm]
15
20
Fig. 7 Typical switching energies per pulse
vs collector current
10
Fig. 8 Typical switching energies per pulse
vs gate resistor
10
t
d(off)
u
t
d(on)
, t
r
, t
d(off)
, t
f
t
V
CC
= 1250 V
I
C
= 1200 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 100 nH
t
d(off)
t
d(on)
t
r
t
f
0
5
10
R
G
[ohm]
15
20
25 °C
125 °C
0
0
0.5
1
V
F
[V]
1.5
2
2.5
20110119a
t
d(on)
, t
r
, t
d(off)
, t
f
[µs]
t
d(on)
0.1
t
r
V
CC
= 1250 V
R
G
= 1.5 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 100 nH
500
1000
I
C
[A]
1500
2000
0.01
0
a
2500
I
F
[A]
2500
3000
s
0.1
Fig. 9 Typical switching timesvs collector current
2.5
V
CC
≤
1800 V
h
e
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
2
1.5
I
Cpulse
/ I
C
1
0.5
IC, Chip
IC, Module
0
0
500
1000
1500
V
CE
[V]
2000
Fig. 11 Turn-off safe operating area (RBSOA)
© 2011 IXYS All rights reserved
p
-o
1
t
f
1
Fig. 10 Typical switching timesvs gate resistor
Fig. 12 Typical diode forward characteristics,
chip level
4-6
MIO 1200-25E10
1600
Q
RR
1400
1200
1100
1000
V
CC
= 1250 V
I
C
= 1200 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 100 nH
1600
1400
1200
I
RM
[A], Q
RR
[µC]
1000
1200
E
rec
[mJ], I
RM
[A], Q
RR
[µC]
I
RM
1000
E
rec
900
800
E
rec
[mJ]
700
600
500
400
300
200
Q
RR
800
E
rec
600
I
RM
400
200
800
600
400
200
V
CC
= 1250 V
R
G
= 1.5 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 100 nH
100
0
0
500
1000
1500
I
F
[A]
2000
2500
0
0
5
10
R
G
[ohm]
15
20
0
Fig. 13 Typical reverse recovery characteristics
vs forward current
Fig. 14 Typical reverse recovery characteristics
vs gate resistor
0.1
e
s
Z
th(j-c)
IGBT
Z
th(j-c)
Diode
Z
th(j-h)
[K/W] IGBT, DIODE
0.01
-o
Z
th JC
(t) =
∑
R
i
(1 - e
-t/
τ
i
)
i
=
1
n
u
i
IGBT
t
1
5.97
179
11.1
189
2
1.99
22
3.36
30
3
0.619
2.4
1.27
7.4
4
0.465
0.54
1.34
1.4
a
h
0.01
Ri(K/kW)
τ
i
(ms)
Ri(K/kW)
τ
i
(ms)
0.001
0.0001
0.001
p
0.1
t [s]
1
10
Fig. 15 Thermal impedance vs time
DIODE
20110119a
© 2011 IXYS All rights reserved
5-6
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