AT6019M
SILICON ABRUPT JUNCTION TUNING VARACTOR
DESCRIPTION:
The
AT6019M
is an Epitaxial Silicon
Abrupt Junction Microwave Tuning
Varactor. This Device is Passivated
With Silicon Dioxide Which Results in
Very Low Leakage Current. The
Capacitance Voltage Relationship
Closley Approximates Square Law
(n = 0.5).
PACKAGE STYLE 15
MAXIMUM RATINGS
I
C
V
CE
P
DISS
T
J
T
STG
O
O
100 mA
70 V
250 mW @ T
C
= 25 C
-65 C to +150 C
-65 C to +150 C
O
O
O
NONE
CHARACTERISTICS
SYMBOL
V
B
C
T
∆
C
T
∆
C
T
Q
T
C
I
R
= 10
µA
V
R
= 4.0 V
T
C
= 25 C
O
TEST CONDITIONS
f = 1.0 MHz
f = 1.0 MHz
f = 1.0 MHz
f = 50 MHz
MINIMUM
70
31.35
7.4
2.50
800
TYPICAL
33.0
MAXIMUM
34.65
2.60
300
UNITS
V
pF
RATIO
RATIO
Ppm/ C
O
C
T
= 0 V / C
T
= 60 V
C
T
= 8.0 V / C
T
= 60 V
V
R
= 4.0 V
V
R
= 4.0 V
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1202
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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