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APTM120H57FT

Description
Full - Bridge MOSFET Power Module
CategoryDiscrete semiconductor    The transistor   
File Size312KB,6 Pages
ManufacturerADPOW
Websitehttp://www.advancedpower.com/
Download Datasheet Parametric View All

APTM120H57FT Overview

Full - Bridge MOSFET Power Module

APTM120H57FT Parametric

Parameter NameAttribute value
MakerADPOW
package instructionFLANGE MOUNT, R-XUFM-X14
Reach Compliance Codeunknow
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)3000 mJ
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Minimum drain-source breakdown voltage1200 V
Maximum drain current (ID)17 A
Maximum drain-source on-resistance0.57 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XUFM-X14
Number of components4
Number of terminals14
Operating modeENHANCEMENT MODE
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)68 A
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsSWITCHING
Transistor component materialsSILICON
APTM120H57FT
Full - Bridge
MOSFET Power Module
VBUS
Q1
Q3
V
DSS
= 1200V
R
DSon
= 570mΩ max @ Tj = 25°C
I
D
= 17A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
G1
S1
Q2
O UT1
O UT2
Q4
G3
S3
G2
S2
NT C1
0/VBUS
NT C2
G4
S4
Features
Power MOS 7
®
FREDFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
G3
S3
G4
S4
OUT2
VBUS
0/VBUS
OUT1
S1
G1
S2
G2
NTC2
NTC1
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
R
DSon
P
D
I
AR
E
AR
E
AS
Parameter
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
T
c
= 25°C
T
c
= 80°C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM120H57FT– Rev 0
July, 2004
T
c
= 25°C
Max ratings
1200
17
13
68
±30
570
390
22
50
3000
Unit
V
A
V
mΩ
W
A
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