AP6924GEY
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Low On-Resistance
▼
Fast Switching Characteristic
▼
Included Schottky Diode
SOT-26
G A
D
K
S
N-CHANNEL MOSFET WITH SCHOTTKY
DIODE
BV
DSS
R
DS(ON)
A
20V
600mΩ
1A
I
D
Description
D
A
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G
S
K
Absolute Maximum Ratings
Symbol
V
DS
V
KA
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
I
F
I
FM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current
3
(MOSFET)
Continuous Drain Current
3
(MOSFET)
Pulsed Drain Current
1
(MOSFET)
Average Forward Current (Schottky)
Pulsed Forward Current
1
(Schottky)
Total Power Dissipation (MOSFET)
Total Power Dissipation (Schottky)
Storage Temperature Range
Operating Junction Temperature Range
Rating
20
20
±6
1
0.8
8
0.5
2
0.9
0.9
-55 to 125
-55 to 125
Units
V
V
V
A
A
A
A
A
W
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3
(MOSFET)
Thermal Resistance Junction-ambient
3
(Schottky)
Value
Max.
Max.
110
110
Units
℃/W
℃/W
Data and specifications subject to change without notice
200301051
AP6924GEY
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
20
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.02
-
-
-
1
-
-
-
1.3
0.3
0.5
21
53
100
125
38
17
12
Max. Units
-
-
600
850
1.2
-
1
10
±10
2
-
-
-
-
-
-
60
-
-
V
V/℃
mΩ
mΩ
V
S
uA
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=1A
V
GS
=2.5V, I
D
=0.5A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=600mA
V
DS
=20V, V
GS
=0V
V
DS
=16V ,V
GS
=0V
V
GS
=±6V
I
D
=600mA
V
DS
=16V
V
GS
=4.5V
V
DS
=10V
I
D
=600mA
R
G
=3.3Ω,V
GS
=5V
R
D
=16.7Ω
V
GS
=0V
V
DS
=10V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
Test Conditions
I
S
=750mA, V
GS
=0V
Min.
-
Typ.
-
Max.
1.2
Unit
V
Schottky Characteristics@T
j
=25℃
Symbol
V
F
I
rm
C
T
Parameter
Forward Voltage Drop
Maximum Reverse Leakage Current
Test Conditions
I
F
=500mA
Vr=20V
V
r
=10V
Min.
-
-
-
Typ.
-
-
21
Max. Units
0.5
100
-
V
uA
pF
Junction Capacitance
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board, t<5sec ; 180℃/W when mounted on min. copper pad.
AP6924GEY
MOSFET
2.5
2.5
T
A
=25
o
C
2.0
5.0V
4.5V
3.5V
I
D
, Drain Current (A)
T
A
=125 C
2.0
o
5.0V
4.5V
3.5V
I
D
, Drain Current (A)
1.5
1.5
2.5V
1.0
2.5V
1.0
0.5
V
G
=2.0V
0.5
V
G
=2.0V
0.0
0
0.5
1
1.5
2
2.5
0.0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1250
1.9
1050
I
D
= 0.5A
T
A
=25
o
C
Normalized R
DS(ON)
1.6
I
D
=1A
V
G
=4.5V
R
DS(ON)
(m
Ω
)
850
1.3
650
1.0
450
0.7
250
1
2
3
4
5
0.4
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
1.0
0.8
0.6
T
j
=125
o
C
T
j
=25
o
C
Normalized V
GS(th)
(V)
1.5
I
S
(A)
1.0
0.4
0.5
0.2
0.0
0
0.2
0.4
0.6
0.8
1
1.2
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP6924GEY
f=1.0MHz
12
100
I
D
=0.6A
V
GS
, Gate to Source Voltage (V)
V
DS
=10V
V
DS
=12V
V
DS
=16V
C (pF)
C
iss
8
4
C
oss
C
rss
0
0
0.5
1
1.5
2
2.5
3
10
1
3
5
7
9
11
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
100us
Normalized Thermal Response (R
thja
)
1ms
1
Duty factor=0.5
0.2
0.1
0.1
I
D
(A)
10ms
0.05
0.02
0.01
100ms
0.1
P
DM
0.01
Single Pulse
t
T
Duty Factor = t/T
Peak T
j
= P
DM
x R
thja
+ Ta
R
thja
=180
o
C/W
T
A
=25
o
C
Single Pulse
0.01
0.1
1
10
1s
DC
0.001
100
0.0001
0.001
0.01
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
SCHOTTKY DIODE
10
1
I
R
, Reverse Current (mA)
20V
0.1
I
F
, Forward Current (A)
1
16V
T
j
= 1 25
o
C
T
j
= 25
o
C
0.01
0.001
25
50
75
100
125
0.1
0
0.2
0.4
0.6
0.8
T
j
, Junction Temperature ( C)
o
V
F
, Forward Voltage Drop (V)
Fig 1. Reverse Leakage Current
v.s. Junction Temperature
Fig 2. Forward Voltage Drop
Motor Drive Control（Motor Control）
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