The E910.97 integrated circuit combines all required
functions for a single chip Passive Infra Red (PIR) motion
detector. Motion detection is signaled through the push-
pull REL output. A digital input OEN enables REL output.
The E910.97 interfaces directly to a PIR sensor element
via a high impedance differential input. The PIR signal is
converted to a 15 bit digital value. The parameters for
sensitivity and timing are set by connecting the corre-
sponding inputs to DC voltages. The voltage levels on
the inputs are converted to digital values with 7 bit res-
olution. All signal processing is performed digitally. The
E910.97 is assembled with a pyro-ceramic element in a
hermetically sealed package.
Applications
ÿ
ÿ
ÿ
ÿ
PIR motion detection
Intruder detection
Occupancy detection
Motion sensor lights
Digital Sensor Assembly with E910.97
The E910.97 PIR Controller results in a single compo-
nent Solution for a Motion Sensor
Traditional analog
PIR Sensor solution
New Smart PIR Detector with E910.97
E910.97A
E910.97A
Comp. &
Comp. Event Logic
Alarm &
Alarm Event Logic
BPF
Test Control
Test Control
Logic
Logic
OSC
REL
OEN
VDD
ADC
ADC
GND
PIN ADC
SENS
ON TIME
ON TIME
BAND GAP REF
BAND GAP REF
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.
ELMOS Semiconductor AG
Data Sheet
QM-No.: 25DS0091E.00
1/9
INTEGRATED CIRCUIT FOR PIR SMART SENSOR
PRELIMINARY INFORMATION - JUL 28, 2011
E910.97
Simple Intrusion Detector for Wired Alarm Systems________________
RE1A
D1
R1
L1
VDD
R2
U1
V1
Q1
D2
N.O.
CON2
1
2
R4
CON1
2
1
+
C1
C2
R3
910.97
SW1
Q2
CON3
1
2
VSS
Comp
U1
R1
R4
R2
R3
C1
C2
RE1
V1
Q1,Q2
D1
D2
Typ. Value
10k
10k
680k
51k
10uF/16V
470nF
TAA1A12F00
2N7002
1N4007
1N4148
Function
Smart Motion Sensor
Series voltage drop resistor
Base current setting resistor
Sensitivity setting resistor
Sensitivity setting resistor
Power supply storage capacitor
Vdd-Vss Supply bypass capacitor
N.O. REL
Transorb, voltage spike protection
NMOS transistors for LED & REL
Supply Reverse connection protector
diode
Fly back protection diode
Note
R1 < (V
Supply
-0.6-V
Reg
)/I
IDD
R4 = (V
Supply
-0.6- V
LED
)/( I
LED
)
R2 =
Select this value, Select Sensitivity step value
also
R3 = ((Step+0.5)/64 x R2)/(1- (Step+0.5)/64)
Active if no movement is detected
Table 1: Component Values for simple intruder detector (V
Supply
= 12V)
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.
Stresses beyond those listed above may cause permanent damage to the device. Exposure to absolute maximum ratings may affect
the device reliability. ESD protection: all pins will be able to withstand a discharge of a 100pF capacitor charged to 1.6kV through a
1500Ω series resistor. Test method: MIL-STD-883D method 3015.
Operating Conditions
(T=25°C, unless stated otherwise)
Parameter
Temperature
Operating temperature range
Regulator
Shunt regulator current
Supply current, ENREG=VDD
Supply current, ENREG=VSS
Regulator voltage
Input OEN
Input low voltage
Input high voltage
Digital test-mode
Analog test-mode
Input Current
Input Current – Analog test mode
Input Current – Digital test mode
Output REL
Output current high
Output current low
Inputs SENS, ONTIME
Input voltage range
Input leakage current
PIRIN / NPIRIN Inputs
PIRIN /NPIRIN input resistance to V
SS
PIRIN /NPIRIN input resistance differential
PIRIN input voltage range
Oscillator and Filter
LPF cutoff frequency
HPF cutoff frequency
On chip oscillator frequency
System Clock
F
CLK
C_G
7
0.44
64
F
CLK
/2
Table 4: Operating Conditions
Hz
Hz
kHz
20
40
-60
60
GΩ
GΩ
mV
-60mV < VIN < 60mV
-60mV < VIN < 60mV
0
-1
V
DD
1
µA
Adjustment between
and ¼ VDD
0V
I
OH
I
OL
-10
10
mA
mA
V
OL
>(V
DD
-1V)
V
OL
<1V
V
IL
V
IH
V
IDT
V
IAT
I
I
I
AT
I
DT
-20
80
V
SS
-0.3
V
DD
+0.1
-1
V
SS
-0.1
V
DD
+0.3
1
20
20
%V
DD
%V
DD
V
V
µA
µA
µA
V
SS
<V
IN
<V
DD
V
IAT
=-0.5V
V
IDT
=V
DD
+0.5V
I
R
I
DD
I
DD
V
DD
2.7
5
40
15
3.3
mA
µA
µA
V
VDD < Regulator voltage,
Outputs unloaded
Regulator not active,
VDD=3.3V (Bond option)
I
R
= 0.5mA
Symbol
Min
-25
Typ
Max
85
Unit
°C
Remarks
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.
connection to a high impedance PIR sensor element.
The analog to digital converter generates a digital
signal from the voltage level measured between the
PIRIN and NPIRIN pins.
A band gap reference ensures a temperature and
supply voltage independent gain.
PIR Sensor Input
A 2nd order low-pass filter with a cut-off frequency of
7Hz
eliminates
unwanted
higher
frequency
nd
components. This signal is then passed to a 2 order
high pass filter with a 0.4Hz cut-off frequency.
Band-Pass Filter
The on-chip shunt regulator accepts a large range of
input currents. It generates a stable 3V supply for the
internal circuitry. The V
DD
pin requires a bypass
capacitor to V
SS
. The reference for the shunt regulator
is taken from the integrated band gap reference.
The IC contains an on chip low power oscillator. The
frequency is set to 64kHz. The timing signals and
cutoff frequencies of the digital filters are derived from
this frequency.
Voltage Regulator
The signal from the band pass filter is rectified. When
the signal level exceeds the set sensitivity threshold,
an internal pulse is generated. A second pulse is
counted, when the signals changes sign and exceeds
the threshold again.
Whenever 2 pulses appear within 2s, the REL output is
activated.
The voltage applied to the ONTIME input determines
how long the REL output stays active. The REL output
remains active from the first alarm condition to the last
alarm condition plus the time selected with the
ONTIME input.
Alarm Event Processor
Oscillator
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.
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