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BC848ALT1G |
NSVBC848CLT1G |
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Description |
Bipolar Transistors - BJT 100mA 30V NPN |
Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 30V |
|
Brand Name |
ON Semiconductor |
ON Semiconductor |
|
Is it lead-free? |
Lead free |
Lead free |
|
package instruction |
SMALL OUTLINE, R-PDSO-G3 |
SMALL OUTLINE, R-PDSO-G3 |
|
Contacts |
3 |
3 |
|
Manufacturer packaging code |
318-08 |
318-08 |
|
Reach Compliance Code |
compliant |
compliant |
|
ECCN code |
EAR99 |
EAR99 |
|
Factory Lead Time |
1 week |
1 week |
|
Maximum collector current (IC) |
0.1 A |
0.1 A |
|
Collector-emitter maximum voltage |
30 V |
30 V |
|
Configuration |
SINGLE |
SINGLE |
|
Minimum DC current gain (hFE) |
110 |
420 |
|
JEDEC-95 code |
TO-236 |
TO-236 |
|
JESD-30 code |
R-PDSO-G3 |
R-PDSO-G3 |
|
JESD-609 code |
e3 |
e3 |
|
Humidity sensitivity level |
1 |
1 |
|
Number of components |
1 |
1 |
|
Number of terminals |
3 |
3 |
|
Maximum operating temperature |
150 °C |
150 °C |
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Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
|
Package shape |
RECTANGULAR |
RECTANGULAR |
|
Package form |
SMALL OUTLINE |
SMALL OUTLINE |
|
Peak Reflow Temperature (Celsius) |
260 |
NOT SPECIFIED |
|
Polarity/channel type |
NPN |
NPN |
|
Maximum power dissipation(Abs) |
0.3 W |
0.3 W |
|
surface mount |
YES |
YES |
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Terminal surface |
Tin (Sn) |
Tin (Sn) |
|
Terminal form |
GULL WING |
GULL WING |
|
Terminal location |
DUAL |
DUAL |
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Maximum time at peak reflow temperature |
40 |
NOT SPECIFIED |
|
Transistor component materials |
SILICON |
SILICON |
|
Nominal transition frequency (fT) |
100 MHz |
100 MHz |
|