NSVBC848CLT1G datasheet, PDF - EEWORLD Datasheet

NSVBC848CLT1G: DescriptionBipolar Transistors - BJT SS SOT23 GP XSTR NPN 30V; CategoryDiscrete semiconductor The transistor; File Size108KB，13 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 30V

Parameter Name	Attribute value
Brand Name	ON Semiconductor
Is it lead-free?	Lead free
Maker	ON Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Manufacturer packaging code	318-08
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	1 week
Maximum collector current (IC)	0.1 A
Collector-based maximum capacity	4.5 pF
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	420
JEDEC-95 code	TO-236
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.3 W
Guideline	AEC-Q101
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.6 V

	NSVBC848CLT1G	BC848ALT1G
Description	Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 30V	Bipolar Transistors - BJT 100mA 30V NPN
Brand Name	ON Semiconductor	ON Semiconductor
Is it lead-free?	Lead free	Lead free
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3
Manufacturer packaging code	318-08	318-08
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Factory Lead Time	1 week	1 week
Maximum collector current (IC)	0.1 A	0.1 A
Collector-emitter maximum voltage	30 V	30 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	420	110
JEDEC-95 code	TO-236	TO-236
JESD-30 code	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	260
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	0.3 W	0.3 W
surface mount	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	40
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz

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