THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ1431EH
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
SYMBOL
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
TEST CONDITIONS
V
GS
= 0 V, I
D
= -250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= -10 V
V
GS
= -10 V
V
GS
= -10 V
V
GS
= -10 V
V
GS
= -4.5 V
V
DS
= -30 V
V
DS
= -30 V, T
J
= 125 °C
V
DS
= -30 V, T
J
= 175 °C
V
DS
-5 V
I
D
= -2 A
I
D
= -2 A, T
J
= 125 °C
I
D
= -2 A, T
J
= 175 °C
I
D
= -1.6 A
MIN.
-30
-1
-
-
-
-
-5
-
-
-
-
-
-
TYP.
-
-1.5
-
-
-
-
-
0.125
-
-
0.230
3
164
44
28
4.2
0.7
1
12.5
5
8
11
8
-
-0.85
MAX.
-
-2
± 100
-1
-50
-150
-
0.175
0.252
0.294
0.300
-
205
55
35
6.5
-
-
18.5
8
12
17
12
-12
-1.2
UNIT
V
nA
μA
A
Drain-Source On-State Resistance
a
Forward Transconductance
b
Dynamic
b
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
b
V
DS
= -10 V, I
D
= -2 A
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain
Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise
Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
V
GS
= 0 V
V
DS
= -25 V, f = 1 MHz
-
-
-
pF
V
GS
= -4.5 V
V
DS
= -15 V, I
D
= -2.2 A
f = 1 MHz
-
-
4.5
-
-
-
-
-
nC
V
DD
= -15 V, R
L
= 15
I
D
-1 A, V
GEN
= -10 V, R
g
= 1
ns
Source-Drain Diode Ratings and Characteristics
I
SM
A
V
V
SD
I
F
= -1.2 A, V
GS
= 0 V
-
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-2880 Rev. C, 14-Dec-15
Document Number: 67048
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ1431EH
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
8
V
GS
= 10 V thru 6 V
8
6
I
D
- Drain Current (A)
I
D
- Drain Current (A)
V
GS
= 5 V
6
10
Vishay Siliconix
4
V
GS
= 4 V
2
4
T
C
= 25
°C
2
T
C
= 125
°C
0
0
1
2
V
GS
= 3 V
3
4
5
T
C
= - 55
°C
0
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
2.0
5
Transfer Characteristics
1.6
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
4
T
C
= - 55
°C
T
C
= 25
°C
3
T
C
= 125
°C
2
1.2
0.8
T
C
= 25
°C
0.4
T
C
= 125
°C
0.0
0
1
2
3
4
5
V
GS
-
Gate-to-Source
Voltage (V)
T
C
= - 55
°C
1
0
0.0
0.4
0.8
1.2
1.6
2.0
I
D
- Drain Current (A)
Transfer Characteristics
1.0
300
Transconductance
0.8
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
250
200
C
iss
0.6
V
GS
= 4.5 V
150
0.4
V
GS
= 10 V
100
C
oss
50
C
rss
0.2
0
0
2
4
6
8
10
I
D
- Drain Current (A)
0
0
5
10
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
S15-2880 Rev. C, 14-Dec-15
Capacitance
Document Number: 67048
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ1431EH
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
2.0
I
D
= 2 A
1.7
V
GS
= 10 V
Vishay Siliconix
V
GS
-
Gate-to-Source
Voltage (V)
8
I
D
= 2.2 A
V
DS
= 15 V
R
DS(on)
- On-Resistance (Normalized)
6
1.4
V
GS
= 4.5 V
1.1
4
2
0.8
0
0
1
2
3
4
5
Q
g
- Total
Gate
Charge (nC)
0.5
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Gate Charge
100
1.0
On-Resistance vs. Junction Temperature
10
T
J
= 150
°C
1
R
DS(on)
- On-Resistance (Ω)
I
S
-
Source
Current (A)
0.8
0.6
0.1
T
J
= 25
°C
0.01
0.4
T
J
= 150
°C
0.2
T
J
= 25
°C
0.001
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
-
Source-to-Drain
Voltage (V)
V
GS
-
Gate-to-Source
Voltage (V)
Source Drain Diode Forward Voltage
0.7
- 29
- 30
0.5
I
D
= 250 μA
V
GS(th)
Variance (V)
0.3
I
D
= 5 mA
0.1
V
DS
- Drain-to-Source Voltage (V)
- 31
- 32
- 33
- 34
- 35
On-Resistance vs. Gate-to-Source Voltage
I
D
= 1 mA
- 0.1
- 0.3
- 50 - 25
0
25
50
75
100
125
150
175
- 36
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
T
J
- Junction Temperature (°C)
Threshold Voltage
S15-2880 Rev. C, 14-Dec-15
Drain Source Breakdown vs. Junction Temperature
Document Number: 67048
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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