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MBR1060

Description
Schottky Diodes & Rectifiers 10A 60V
CategoryDiscrete semiconductor    diode   
File Size227KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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Schottky Diodes & Rectifiers 10A 60V

MBR1060 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PSFM-T2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.95 V
JEDEC-95 codeTO-220AC
JESD-30 codeR-PSFM-T2
Humidity sensitivity level1
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage60 V
surface mountNO
technologySCHOTTKY
Terminal surfacePure Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
MBR1035 thru MBR10200
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Schottky Barrier Rectifier
TO-220AC
MECHANICAL DATA
Case:
TO-220AC
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
5 in-lbs maximum
Weight:
1.88 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
I
F
=10A, T
J
=25℃
I
F
=10A, T
J
=125℃
Maximum reverse current @ rated VR
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0
μs,
1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
T
J
=25
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FRM
I
FSM
I
RRM
V
F
1.0
0.70
0.57
I
R
dV/dt
R
θJC
T
J
T
STG
15
0.80
0.70
0.1
10
10000
3
- 55 to +150
- 55 to +175
6
MBR
1035
35
24
35
MBR
1045
45
31
45
MBR
1050
50
35
50
MBR
1060
60
42
60
10
20
150
0.5
0.85
0.71
1.05
-
mA
V/μs
O
MBR
1090
90
63
90
MBR
100
70
100
MBR
150
105
150
MBR
200
140
200
10100 10150 10200
UNIT
V
V
V
A
A
A
A
V
C/W
O
O
C
C
Document Number: DS_D1308050
Version: L13
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