SILICON POWER TRANSISTOR
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | Central Semiconductor |
package instruction | FLANGE MOUNT, O-MBFM-P2 |
Reach Compliance Code | _compli |
ECCN code | EAR99 |
Maximum collector current (IC) | 10 A |
Collector-based maximum capacity | 600 pF |
Collector-emitter maximum voltage | 120 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 5 |
JEDEC-95 code | TO-3 |
JESD-30 code | O-MBFM-P2 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 200 °C |
Minimum operating temperature | -65 °C |
Package body material | METAL |
Package shape | ROUND |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | PNP |
Maximum power dissipation(Abs) | 150 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | PIN/PEG |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 1 MHz |
VCEsat-Max | 2 V |
Base Number Matches | 1 |
2N6230 | 2N5632 | 2N5633 | 2N5634 | 2N6229 | 2N6231 | |
---|---|---|---|---|---|---|
Description | SILICON POWER TRANSISTOR | SILICON POWER TRANSISTOR | SILICON POWER TRANSISTOR | SILICON POWER TRANSISTOR | SILICON POWER TRANSISTOR | SILICON POWER TRANSISTOR |
Is it lead-free? | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead |
Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
Reach Compliance Code | _compli | _compli | _compli | _compli | _compli | _compli |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Maximum collector current (IC) | 10 A | 10 A | 10 A | 10 A | 10 A | 10 A |
Collector-emitter maximum voltage | 120 V | 100 V | 120 V | 140 V | 100 V | 140 V |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Minimum DC current gain (hFE) | 5 | 25 | 5 | 5 | 5 | 5 |
JEDEC-95 code | TO-3 | TO-3 | TO-3 | TO-3 | TO-3 | TO-3 |
JESD-30 code | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 |
JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 |
Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 |
Maximum operating temperature | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C |
Package body material | METAL | METAL | METAL | METAL | METAL | METAL |
Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Polarity/channel type | PNP | NPN | NPN | NPN | PNP | PNP |
Maximum power dissipation(Abs) | 150 W | 150 W | 150 W | 150 W | 150 W | 150 W |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | NO | NO | NO | NO | NO | NO |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Terminal form | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Nominal transition frequency (fT) | 1 MHz | 1 MHz | 1 MHz | 1 MHz | 1 MHz | 1 MHz |
Base Number Matches | 1 | 1 | - | 1 | 1 | 1 |