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APT501R1GN

Description
Power Field-Effect Transistor, 6.5A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257
CategoryDiscrete semiconductor    The transistor   
File Size558KB,1 Pages
ManufacturerADPOW
Websitehttp://www.advancedpower.com/
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APT501R1GN Overview

Power Field-Effect Transistor, 6.5A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257

APT501R1GN Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, R-MSFM-P3
Reach Compliance Codeunknown
Shell connectionISOLATED
ConfigurationSINGLE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)6.5 A
Maximum drain current (ID)6.5 A
Maximum drain-source on-resistance1.1 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-257
JESD-30 codeR-MSFM-P3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power consumption environment100 W
Maximum power dissipation(Abs)100 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
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