K6T4016U3C-RB70 datasheet, PDF

K6T4016U3C-RB70: Description256Kx16 bit Low Power and Low Voltage CMOS Static RAM; Categorystorage storage; File Size102KB，9 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K6T4016U3C-RB70 Overview

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	TSOP2
package instruction	TSOP2-R, TSOP44,.46,32
Contacts	44
Reach Compliance Code	compli
ECCN code	3A991.B.2.A
Maximum access time	70 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G44
length	18.41 mm
memory density	4194304 bi
Memory IC Type	STANDARD SRAM
memory width	16
Number of functions	1
Number of terminals	44
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2-R
Encapsulate equivalent code	TSOP44,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	240
power supply	3 V
Certification status	Not Qualified
reverse pinout	YES
Maximum seat height	1.2 mm
Minimum standby current	2 V
Maximum slew rate	0.045 mA
Maximum supply voltage (Vsup)	3.3 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
width	10.16 mm

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