PD - 90880C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-204AA)
Product Summary
Part Number Radiation Level R
DS(on)
IRH9130
100K Rads (Si)
0.3Ω
IRH93130
300K Rads (Si)
0.3Ω
I
D
-11A
-11A
IRH9130
100V, P-CHANNEL
RADHard HEXFET
TECHNOLOGY
™
®
International Rectifier’s RADHard HEXFET
®
technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
TO-204AA
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
➀
PD @ T C = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
➁
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
-11
-7.0
-44
75
0.6
±20
190
-11
7.5
-10
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
g
300 ( 0.063 in.(1.6mm) from case for 10s)
11.5 (Typical )
For footnotes refer to the last page
www.irf.com
1
02/18/03
IRH9130
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
—
-0.1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
—
—
0.3
0.325
-4.0
—
-25
-250
-100
100
45
10
25
30
50
70
70
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -12V, ID = -7.0A
➃
VGS = -12V, ID = -11A
VDS = VGS, ID = -1.0mA
VDS > -15V, IDS = -7.0A
➃
VDS= -80V ,VGS=0V
VDS = -80V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS =-12V, ID = -11A
VDS = -50V
VDD =-50V, ID = -11A
VGS =-12V, RG = 7.5Ω
BVDSS
Drain-to-Source Breakdown Voltage
-100
∆BV
DSS /∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
—
VGS(th)
Gate Threshold Voltage
-2.0
g fs
Forward Transconductance
2.5
IDSS
Zero Gate Voltage Drain Current
—
—
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
nA
nC
ns
nH
Measured from Drain lead (6mm /0.25in from
package) to Source lead (6mm /0.25in.
from
Package) with Source wires internally
bonded from Source Pin to Drain Pad
C iss
Coss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1200
300
74
—
—
—
pF
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
-11
-44
-3.0
250
0.84
Test Conditions
A
V
nS
µC
T
j
= 25°C, IS = -11A, V GS = 0V
➃
Tj = 25°C, IF = -11A, di/dt
≤
-100A/µs
VDD
≤
-50V
➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
RthCS
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
Min Typ Max Units
—
—
—
— 1.67
—
30
0.12 —
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
Pre-Irradiation
IRH9130
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
➄➅
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
➃
On-State Resistance
Diode Forward Voltage
➃
100K Rads(Si)
1
300K Rads (Si)
2
Units
V
nA
µA
Ω
V
Test Conditions
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20 V
V
DS
=-80V, V
GS
=0V
V
GS
= -12V, I
D
=-7A
V
GS
= 0V, IS = -11A
Min
-100
-2.0
—
—
—
—
—
Max
—
-4.0
-100
100
-25
0.3
-3.0
Min
-100
-2.0
—
—
—
—
—
Max
—
-5.0
-100
100
-25
0.3
-3.0
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LE T
MeV/(mg/cm²))
28
36.8
59.9
Energy
(MeV)
285
305
345
Range
(µm)
@VGS=0V
Cu
Br
I
43
39
32.8
-100
-100
-60
@VGS=5V
-100
-100
—
VD S(V)
@VGS=10V
-100
-70
—
@VGS=15V
-70
-50
—
@VGS=20V
-60
-40
—
-120
-100
-80
VDS
-60
-40
-20
0
0
5
10
VGS
15
20
Cu
Br
I
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRH9130
Pre-Irradiation
100
-I
D
, Drain-to-Source Current (A)
-I
D
, Drain-to-Source Current (A)
VGS
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
100
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
10
10
-5.0V
-5.0V
1
0.1
20µs PULSE WIDTH
T = 25 C
J
°
1
10
100
1
0.1
20µs PULSE WIDTH
T = 150 C
J
°
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
I
D
= -11A
T
J
= 25
°
C
T
J
= 150
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
-I
D
, Drain-to-Source Current (A)
2.0
1.5
10
1.0
0.5
1
5
6
7
8
9
V DS = -50V
20µs PULSE WIDTH
10
11
12
13
0.0
-60 -40 -20
V
GS
= -12V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
www.irf.com
Pre-Irradiation
IRH9130
2000
1600
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= -11A
16
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
C, Capacitance (pF)
Ciss
1200
12
800
8
C
oss
400
4
C
rss
0
1
10
100
0
0
10
20
FOR TEST CIRCUIT
SEE FIGURE 13
40
50
30
60
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
T
J
= 25
°
C
1
-I
D
, Drain Current (A)
I
T
J
=
150
°
C
100
100us
10
0.1
0.0
V
GS
= 0 V
1.0
2.0
3.0
4.0
5.0
1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
1ms
10ms
100
1000
-V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
www.irf.com
5
京公网安备 11010802033920号
EEWORLD
