KST3904
KST3904
General Purpose Transistor
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Value
60
40
6
200
350
150
Units
V
V
V
mA
mW
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEX
h
FE
Parameter
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
* DC Current Gain
Test Condition
I
C
=10µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10µA, I
C
=0
V
CE
=30V, V
EB
=3V
V
CE
=1V, I
C
=0.1mA
V
CE
=1V, I
C
=1mA
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=50mA
V
CE
=1V, I
C
=100mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
CB
=5V, I
E
=0, f=1MHz
V
CE
=20V, I
C
=10mA, f=100MHz
I
C
=100µA, V
CE
=5V, R
S
=1KΩ
f=10Hz to 15.7KHz
V
CC
=3V, V
BE
=0.5V
I
C
=10mA, I
B1
=1mA
V
CC
=3V, I
C
=10mA,
I
B1
=I
B2
=1mA
300
5
70
250
0.65
40
70
100
60
30
Min.
60
40
6
50
Max.
Units
V
V
V
nA
300
V
CE
(sat)
V
BE
(sat)
C
ob
f
T
NF
t
ON
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Output Capacitance
Current Gain-Bandwidth Product
Noise Figure
Turn On Time
Turn Off Time
0.2
0.3
0.85
0.95
4
V
V
V
V
pF
MHz
dB
ns
ns
t
OFF
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Marking
1A
©2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002
KST3904
Typical Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
240
10
V
CE
= 1V
200
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
160
1
V
BE
(sat)
120
80
0.1
V
CE
(sat)
40
0
0.1
0.01
0.1
1
10
100
1
10
100
I
C
[A], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
1000
I
E
= 0
f = 1MHz
f
T
[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
V
CE
= 20V
C
ob
[pF], CAPACITANCE
1
100
0.1
1
10
100
10
0.1
1
10
100
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 3. Output Capacitance
Figure 4. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
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