KTN2222S datasheet, PDF - EEWORLD Datasheet

KTN2222S: Description600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size472KB，5 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KTN2222S Overview

600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR

Parameter Name	Attribute value
Maker	KEC
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Samacsys Descripti	EPITAXIAL PLANAR NPN TRANSISTOR
Maximum collector current (IC)	0.6 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.35 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
Maximum off time (toff)	285 ns
Maximum opening time (tons)	35 ns

	KTN2222S	KTN2222AS
Description	600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR	600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Maker	KEC	KEC
Parts packaging code	SOT-23	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3	SOT-23, 3 PIN
Contacts	3	3
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.6 A	0.6 A
Collector-emitter maximum voltage	30 V	40 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	30	40
JESD-30 code	R-PDSO-G3	R-PDSO-G3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	0.35 W	0.35 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	300 MHz
Maximum off time (toff)	285 ns	285 ns
Maximum opening time (tons)	35 ns	35 ns

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