1N4813B datasheet, PDF - EEWORLD Datasheet

1N4813B: DescriptionVariable Capacitance Diode, 68pF C(T), 33V, Silicon, Abrupt, DO-7; CategoryDiscrete semiconductor diode; File Size36KB，1 Pages; ManufacturerCobham Semiconductor Solutions

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1N4813B Overview

Variable Capacitance Diode, 68pF C(T), 33V, Silicon, Abrupt, DO-7

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	O-LALF-W2
Reach Compliance Code	unknow
ECCN code	EAR99
Minimum breakdown voltage	33 V
Shell connection	ISOLATED
Configuration	SINGLE
Diode Capacitance Tolerance	5%
Minimum diode capacitance ratio	2.3
Nominal diode capacitance	68 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
JEDEC-95 code	DO-7
JESD-30 code	O-LALF-W2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.5 W
Certification status	Not Qualified
minimum quality factor	15
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Varactor Diode Classification	ABRUPT
Base Number Matches	1

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