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2N1490

Description
Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, TO-3VAR, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size92KB,1 Pages
ManufacturerGeneral Transistor Corp
Download Datasheet Parametric View All

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Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, TO-3VAR, 2 PIN

2N1490 Parametric

Parameter NameAttribute value
Parts packaging codeTO-204AA
package instructionFLANGE MOUNT, O-MBFM-P2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)6 A
Collector-emitter maximum voltage100 V
ConfigurationSingle
Minimum DC current gain (hFE)25
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)75 W
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)1 MHz
Base Number Matches1
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