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MPSH11L34Z

Description
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size521KB,16 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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MPSH11L34Z Overview

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, 3 PIN

MPSH11L34Z Parametric

Parameter NameAttribute value
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.05 A
Collector-based maximum capacity0.7 pF
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)650 MHz
Base Number Matches1

MPSH11L34Z Related Products

MPSH11L34Z MPSH11D27Z
Description RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, 3 PIN RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92
Reach Compliance Code unknow compliant
ECCN code EAR99 EAR99
Other features LOW NOISE LOW NOISE
Maximum collector current (IC) 0.05 A 0.05 A
Collector-based maximum capacity 0.7 pF 0.7 pF
Collector-emitter maximum voltage 25 V 25 V
Configuration SINGLE SINGLE
highest frequency band VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND
JESD-30 code O-PBCY-T3 O-PBCY-T3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 650 MHz 650 MHz

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