H1MF1 datasheet, PDF - EEWORLD Datasheet

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H1MF1: DescriptionRectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon,; CategoryDiscrete semiconductor diode; File Size452KB，5 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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H1MF1 Overview

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon,

H1MF1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
package instruction	R-PDSO-F2
Reach Compliance Code	compliant
Other features	FREE WHEELING DIODE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PDSO-F2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Maximum repetitive peak reverse voltage	1000 V
Maximum reverse recovery time	0.075 µs
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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H1A THRU H1M

Surface Mount High Efficient Rectifier

Features

RoHS

COMPLIANT

● Low profile package

● Ideal for automated placement

● Glass passivated chip junction

● Fast switching for high efficiency

● High forward surge capability

● Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °

Typical Applications

For use in high efficient switching rectification of power supply,

inverters, converters, and freewheeling diodes for

consumer and telecommunication.

Mechanical Date

●

Package:

SOD-123FL

Molding compound meets UL 94 V-0 flammability

rating, RoHS-compliant, halogen-free

●

Terminals:

Tin plated leads, solderable per

J-STD-002 and JESD22-B102

●

Polarity:

Cathode line denotes the cathode end

■

Maximum Ratings

(Ta=25℃ Unless otherwise specified

）

PARAMETER

Device marking code

Repetitive peak reverse voltage

Average rectified output current

@60Hz Half-sine wave, Resistance load,

Ta (FIG.1)

Surge(non-repetitive)forward current

@60Hz half-sine wave,1 cycle, Tj=25℃

Storage temperature

Junction temperature

VRRM

SYMBOL

UNIT

H1A

H1B

100

H1D

200

H1G

400

H1J

600

H1K

800

H1M

1000

1.0

IFSM

Tstg

℃

-55 ~+150

■Electrical

Characteristics

（T

=25℃ Unless otherwise specified）

PARAMETER

Maximum instantaneous

forward voltage drop per diode

Maximum reverse recovery time

SYMBOL

UNIT

TEST

CONDITIONS

IFM=1.0A

IF=0.5A,IR=1.0A,

IRR=0.25A

Ta=25℃

IRRM

μA

Ta=125℃

100

H1A

H1B

H1D

H1G

H1J

H1K

H1M

1.0

1.3

1.7

trr

Maximum DC reverse current at

rated DC blocking voltage per diode

1/5

S-S059

Rev. 2.2, 28-Apr-14

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

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