CSD15380F3T datasheet, PDF - EEWORLD Datasheet

CSD15380F3T: Description20-V N-Channel FemtoFET MOSFET 3-PICOSTAR -55 to 150; CategoryDiscrete semiconductor The transistor; File Size1MB，14 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/; Environmental Compliance

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20-V N-Channel FemtoFET MOSFET 3-PICOSTAR -55 to 150

Parameter Name	Attribute value
Brand Name	Texas Instruments
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Texas Instruments
package instruction	GRID ARRAY, R-PBGA-B3
Reach Compliance Code	compliant
Factory Lead Time	6 weeks
Samacsys Description	20V, N ch NexFET MOSFET™, single LGA0.6x0.7, 1460mOhm
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Minimum drain-source breakdown voltage	20 V
Maximum drain current (ID)	0.5 A
Maximum drain-source on-resistance	4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.17 pF
JESD-30 code	R-PBGA-B3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	GRID ARRAY
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
surface mount	YES
Terminal form	BUTT
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

	CSD15380F3T	CSD15380F3
Description	20-V N-Channel FemtoFET MOSFET 3-PICOSTAR -55 to 150	20-V N-Channel FemtoFET MOSFET 3-PICOSTAR -55 to 150
Brand Name	Texas Instruments	Texas Instruments
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	Texas Instruments	Texas Instruments
package instruction	GRID ARRAY, R-PBGA-B3	GRID ARRAY, R-PBGA-B3
Reach Compliance Code	compliant	compliant
Factory Lead Time	6 weeks	6 weeks
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Minimum drain-source breakdown voltage	20 V	20 V
Maximum drain current (ID)	0.5 A	0.5 A
Maximum drain-source on-resistance	4 Ω	4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.17 pF	0.17 pF
JESD-30 code	R-PBGA-B3	R-PBGA-B3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY	GRID ARRAY
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL
surface mount	YES	YES
Terminal form	BUTT	BUTT
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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